参数资料
| 型号： | BD3575HFP-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO ADJ .5A HRP5 |
| 标准包装： | 2,000 |
| 稳压器拓扑结构： | 正，可调式 |
| 输出电压： | 2.8 V ~ 12 V |
| 输入电压： | 4.5 V ~ 36 V |
| 电压 - 压降（标准）： | 0.25V @ 200mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 500mA（最小值） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | HRP-5 |
| 供应商设备封装： | HRP-5 |
| 包装： | 带卷 (TR) |
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP
● Output Voltage Adjustment
Technical Note
Vo
R2
To set the output voltage insert pull-down resistor R1 between the ADJ and GND pins,
and pull-up resistor R2 between the V O and ADJ pins.
ADJ
● Setting of Heat
R1
Fig.22
Vo = VADJ × (R1+R2) / R1 [V]
｛ VADJ=1.26V(TYP.) ｝
The recommended connection resistor for the ADJ-GND is 30k ～ 150k Ω .
2.0
TO252-3
2.0
TO252-5
2.0
HRP5
1.6
IC mounted on a ROHM standard board
Substrate size: 70 mm ? 70 mm ? 1.6 mm
? ja = 104.2 (°C/W)
1.6
IC mounted on a ROHM standard board
Substrate size: 70 mm ? 70 mm ? 1.6 mm
? ja = 96.2 (°C/W)
1.6
1.6 W
IC mounted on a ROHM standard board
Substrate size: 70 mm ? 70 mm ? 1.6 mm
? ja = 78.1 (°C/W)
1.2 W
1.3W
1.2
0.8
0.4
0
1.2
0.8
0.4
0
1.2
0.8
0.4
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
25
50
75
100
125
150
AMBIENT TEMPERATURE: T a [°C]
Fig. 23
AMBIENT TEMPERATURE: T a [ ℃ ]
Fig. 24
AMBIENT TEMPERATURE: T a [°C]
Fig. 25
Refer to the heat mitigation characteristics illustrated in Figs. 23, 24 and 25 when using the IC in an environment where T a
≧ 25 ℃ . The characteristics of the IC are greatly influenced by the operating temperature. If the temperature is in excess of
the maximum junction temperature T jmax , the elements of the IC may be deteriorated or damaged. It is necessary to give
sufficient consideration to the heat of the IC in view of two points, i.e., the protection of the IC from instantaneous damage
and the maintenance of the reliability of the IC in long-time operation.
In order to protect the IC from thermal destruction, it is necessary to operate the IC not in excess of the maximum junction
temperature T jmax . Fig. 23 illustrates the power dissipation/heat mitigation characteristics for the TO252 package. Operate
the IC within the power dissipation Pd. The following method is used to calculate the power consumption P C (W).
Vcc : Input voltage
P C =(V CC -V O ) × I O +V CC × I CC
Power dissipation Pd ≦ P C
Vo : Output voltage
Io : Load current
Icc : Total supply current
The load current I O is obtained to operate the IC within the power dissipation.
Io ≦
Pd-V CC × I CC
V CC -V O
(For more information about I CC , see page 12.)
The maximum load current I omax for the applied voltage V CC can be calculated during the thermal design process.
● Calculation example
Example: BD3571FP V CC = 12 V and V O = 5 V at T a = 85 ℃
I O ≦
0.624-12 × I CC
12-5
θ ja =104.2 ℃ /W → -9.6mAW/ ℃
25 ℃ =1.2W → 85 ℃ =0.624W
I O ≦ 89mA
(I CC =30 μ A)
Make a thermal calculation in consideration of the above so that the whole operating temperature range will be within the
power dissipation.
The power consumption Pc of the IC in the event of shorting (i.e., if the V O and GND pins are shorted) will be obtained from
the following equation.
Pc=V CC × (I CC +Ishort)
Ishort = Short current
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
5/9
2011.03 - Rev.B
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