参数资料
型号: BD6524HFV-TR
厂商: Rohm Semiconductor
文件页数: 1/20页
文件大小: 0K
描述: IC PWR MANAGEMENT SWITCH HVSOF6
标准包装: 3,000
应用: 便携式设备
电流 - 电源: 50µA
电源电压: 3 V ~ 5.5 V
工作温度: -25°C ~ 75°C
安装类型: 表面贴装
封装/外壳: 6-HVSOF
供应商设备封装: 6-HVSOF
包装: 带卷 (TR)
Datasheet
Load Switch IC
BD6524HFV
● General Description
● Key Specifications
Power switch for memory card Slot (BD6524HFV) is a
high side switch IC which has one circuit of N-channel
Power MOS FET. The switch has 200m ? (Typ.) ON
resistance. Operations from low input voltage (V IN ≥
3.0V) can be used for various switch applications.
The switch turns on slowly by the built-in charge pump,
therefore, it is possible to reduce inrush current at
switch on. There is no parasitic diode between the
drain and the source, reverse current flowing at switch
Input voltage range:
ON resistance : (V IN =5V)
(V IN =3.3V)
Continuous current:
Standby current:
Operating temperature range:
3.0V to 5.5V
200m ? (Typ.)
250m ? (Typ.)
0.5 A
0.1 μ A (Typ.)
-25 ℃ to +75 ℃
off is prevented. Furthermore, it has a discharge circuit
that discharges electric charge from capacitive load at
switch off.
The BD6524HFV is available in a space-saving
HVSOF6 package.
● Features
Low on resistance (200m ? , Typ.) N-MOS switch
built in
Maximum output current : 500mA
Soft start circuit
Under voltage lockout (UVLO) circuit
Discharge circuit built in : operations at switch off,
UVLO
Reverse current flow blocking at switch off
● Applications
Memory card slots for notebook PC, digital still camera,
portable music player, compact portable devices such
as PDA and so forth
● Typical Application Circuit
VIN
VIN
0.1uF to 1uF
EN
EN
● Package
HVSOF6
VOUT
VOUT
GND
W(Typ.) D(Typ.) H (Max.)
1.60mm x 3.00mm x 0.75mm
HVSOF6
LOAD
○ Product structure : Silicon monolithic integrated circuit
○ This product has no designed protection against radioactive rays
www.rohm.com
? 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 14 ? 001
1/17
TSZ02201-0E3E0H300360-1-2
11.Mar.2013 Rev.001
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