参数资料
型号: BD82103GWL-E2
厂商: Rohm Semiconductor
文件页数: 6/13页
文件大小: 0K
描述: IC LED DRVR WHITE BCKLGT 11-UCSP
标准包装: 1
恒定电流:
拓扑: 切换式电容器(充电泵)
输出数: 3
内部驱动器:
类型 - 主要: 背光
频率: 560kHz ~ 1.14MHz
电源电压: 2.7 V ~ 5.5 V
输出电压: 4.7V
安装类型: 表面贴装
封装/外壳: 11-TFBGA
供应商设备封装: UCSP50L1
包装: 标准包装
工作温度: -30°C ~ 85°C
产品目录页面: 1373 (CN2011-ZH PDF)
其它名称: BD82103GWL-E2DKR
BD82103GWL
Datasheet
(2) Charge pump
a) Description of operations
Pin voltage comparison takes place at VOUT control section, and then VOUT generation takes place so that the LED
cathode voltage with the highest Vf is set to 0.2V. A boost rate is changed automatically to a proper one at the Charge
Pump Mode Control section so that operation can take place at possible low boost rate. In addition, if the output
voltage falls below 1.5V, this IC is reset for short-circuit at output.
b) Soft start function
BD82103GWL have a soft start function that prevents the rush current.
T OFF
EN/LED*
VOUT
I LED
Soft Start
Ordinal mode
Figure 7. Soft Start
c) Automatic boost rate change
The boost rate automatically switches to the best mode.
* (×1 mode ? ×1.5 mode) or (×1.5 mode ? ×2 mode)
If a battery voltage drop occurs BD82103GWL cannot maintain the LED constant current, and then mode transition
begins.
* (×1.5 mode ? ×1 mode) or (×2 mode ? ×1.5 mode)
If a battery voltage rise occurs, VOUT and VBAT detection are activated, and then mode transition begins.
(3) UVLO (Under Voltage Lock Out)
If the input voltage falls below 2.2V, BD82103GWL is shut down to prevent malfunction due to ultra-low voltage.
(4) OVP (Over Voltage Protection)
This circuit protects this IC against damage when the C/P output voltage (VOUT) rises extremely for some external
factors.
(5) Thermal shutdown (TSD)
To protect this IC against thermal damage or heat-driven uncontrolled operations, this circuit turns off the output if the
chip temperature rises over 175 ℃ . In addition, it turns on the output if the temperature returns to the normal
temperature.
(6) Power sequence
EN signal must be released after VBAT voltage enough rise up.
Prohibit the VBAT rise up during EN=”H”.
VBAT
EN
Figure 8. Power sequence
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
6/10
TSZ02201-0G3G0C200240-1-2
16.Oct.2012 Rev.001
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