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| 型号： | BD9207FPS-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 10/14页 |
| 文件大小： | 0K |
| 描述： | IC LED DVR STEPDWN 1.5A TO252S-5 |
| 产品培训模块： | LED Driver Solutions |
| 标准包装： | 1 |
| 拓扑： | PWM，降压（降压） |
| 输出数： | 1 |
| 内部驱动器： | 是 |
| 类型 - 主要： | 背光 |
| 频率： | 810kHz ~ 990kHz |
| 电源电压： | 8 V ~ 35 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | TO-252-5 |
| 包装： | 标准包装 |
| 工作温度： | -20°C ~ 85°C |
| 其它名称： | BD9207FPS-E2DKR |
BD9207FPS
Technical Note
10. This IC is a monolithic IC, and there are P + isolation and P substrate for element separation between each
element. P-N joint is formed with this P layer and N each element’s layer, and various parasitic elements are
composed.
For instance, as shown in the figure below, when resistance and transistor are connected with terminal:
○ P-N joint operates as a parasitic diode when GND > (terminal A) in resistance, GND >(terminal B) in transistor
(NPN).
○ Moreover, when GND > (terminal B) in transistor (NPN),the parasitic NPN transistor operates with N layer of other
elements adjoining with above-mentioned parasitic diode.
According to potential relation, parasitic element in IC structure can be consequent. The operating of parasitic
element maybe interfere the circuit operation, and become the cause of malfunction and destruction. Therefore,
please pay enough attention not to use it by impressing lower voltage than GND (P substrate) on I/O terminal etc
to operate parasitic element.
Resistance
Transistor （ＮＰＮ）
（ Terminal Ａ）
（ Terminal Ｂ）
Ｃ
Ｂ
Ｅ
ＧＮＤ
Ｎ
Ｐ
＋
Ｐ
Ｐ
＋
Ｐ
＋
Ｐ
Ｐ ＋
Ｎ
Ｎ
Ｎ
Ｐ substrate
Ｎ
Parasitic element
ＧＮＤ
Ｎ
Ｐ substrate
ＧＮＤ
Ｎ
Parasitic element
（ Terminal Ｂ）
（ Terminal Ａ）
ＧＮＤ
Parasitic element
other adjoining elements
Ｂ
Ｃ
Ｅ
ＧＮＤ
Parasitic element
Simple structure example of bipolar IC
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
10/11
2009.07 - Rev.A
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