参数资料
型号: BD9703FP-E2
厂商: Rohm Semiconductor
文件页数: 13/19页
文件大小: 0K
描述: IC REG BUCK ADJ 1.5A TO252
标准包装: 1
类型: 降压(降压)
输出类型: 可调式
输出数: 1
输出电压: 1 V ~ 32 V
输入电压: 8 V ~ 36 V
频率 - 开关: 300kHz
电流 - 输出: 1.5A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: TO-252-5,DPak(4 引线 + 接片),TO-252AD
包装: 标准包装
供应商设备封装: TO-252-5
产品目录页面: 1373 (CN2011-ZH PDF)
其它名称: BD9703FP-E2DKR
BD9701FP/CP-V5/T/T-V5,BD9703FP/CP-V5/T/T-V5,BD9702CP-V5/T/T-V5
Technical Note
8. IC pin input
This IC is a monolithic IC which (as below) has P+ substrate and betweenthe various pin. A P-N junction is formed from
this P layer of each pin. For example the relation between each potential is as follows. (When GND > PinB and GND >
PinA, the P-N junction operates as a parasitic diode.) Parasitic diodes can occur inevitably in the structure of the IC. The
operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical
damage. Accordingly, you must not use methods by which parasitic diodes operate, such as applying a voltage that is
lower than the GND(P substrate)voltage to an input pin.
Transistor (NPN)
(PinA)
Resistance
(PinB)
B
E
GND
N
N
P +
N
P
P +
N
P +
N
P
P +
N
P substrate
P substrate
Parasitic diode
GND
Parasitic diode
GND
(PinB)
(PinA)
GND
Parasitic diode
Other adjacent components
B
C
E
GND
Parasitic diode
Fig.34 Simplified structure of a Bipolar IC
9. Common impedance
Power supply and ground wiring should reflect consideration of the need to lower common impedance and minimize ripple
as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and
capacitance).
10. Pin short and mistake fitting
Do not short-circuit between OUT pin and VCC pin, OUT pin and GND pin,
or VCC pin and GND pin. When soldering the IC on circuit board,
please be unusually cautious about theorientation and the position of the IC.
Bypass diode
Back current prevention diode
VCC
Output Pin
Fig.35
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
13/16
2009.04- Rev.B
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