参数资料
型号: BD9763FVM-TR
厂商: Rohm Semiconductor
文件页数: 10/12页
文件大小: 0K
描述: IC REG CTRLR BST PWM 8-MSOP
标准包装: 1
PWM 型: 控制器
输出数: 1
频率 - 最大: 1.2MHz
占空比: 99.5%
电源电压: 4 V ~ 9 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 8-VSSOP,8-MSOP(0.110",2.80mm 宽)
包装: 标准包装
其它名称: BD9763FVM-DKR
BD9763FVM-DKR-ND
BD9763FVMDKR
BD9763FVM
Technical Note
(11) IC pin input
This monolithic IC contains P + isolation and PCB layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of
parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.14,
○ the P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for
the transistor (NPN).
○ Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines
With the N layer of other adjacent elements to operate as a parasitic NPN transistor.
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result
of the IC’s architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in away that will
trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (PCB) voltage to input
and output pins.
(Pin A)
(Pin A)
(Pin B)
Parasitic diode
GND
GND
(Pin B)
PCB
PCB
GND
GND
Parasitic diode
Parasitic transistors
Other adjacent element
GND
Parasitic elements
Fig.14
● Power Dissipation Reduction
pd(W)
0.8
0.6
0.4
0.2
0
0.587W
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE : Ta( ℃)
IC mounted on a ROHM standard board (70mm x 70mm x 1.6mm, glass epoxy)
Fig.15
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
10/11
2009.05 - Rev.A
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