参数资料
| 型号： | BD9778HFP-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/19页 |
| 文件大小： | 0K |
| 描述： | IC REG BUCK ADJ 2A HRP7 |
| 标准包装： | 1 |
| 类型： | 降压（降压） |
| 输出类型： | 可调式 |
| 输出数： | 1 |
| 输出电压： | 1 V ~ 35 V |
| 输入电压： | 7 V ~ 35 V |
| 频率 - 开关： | 50kHz ~ 500kHz |
| 电流 - 输出： | 2A |
| 同步整流器： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-8，D²Pak（7 引线+接片），TO-263CA |
| 包装： | 标准包装 |
| 供应商设备封装： | HRP7 |
| 其它名称： | BD9778HFP-DKR BD9778HFP-DKR-ND BD9778HFPDKR |
BD9778F, BD9778HFP, BD9001F, BD9781HFP
Absolute Maximum Ratings(Ta = 25?C)
Technical Note
Parameter
Symbol
Limits
Unit
Power supply
voltage
BD9778F/HFP,BD9781HFP
BD9001F
V IN
36
50
V
Output switch pin voltage
V SW
V IN
V
Output switch current
BD9778F/HFP, BD9001F
BD9781HFP
I SW
2
4
*1
*1
A
EN/SYNC, EN pin voltage
RT, FB, INV pin voltage
V EN/SYNC, V EN
V RT, V FB, V INV
V IN
7
V
Power dissipation
HRP7
SOP8
P d
5.5
0.69
*2
*3
W
Operating temperature BD9778F/HFP,BD9781HFP
range BD9001F
Storage temperature range
Maximum junction temperature
T opr
T stg
T jmax
-40 ~ +125
-40 ~ +95
-55 ~ +150
150
?C
?C
?C
*1 Should not exceed Pd-value.
*2 Reduce by 44mW/°C over 25°C, when mounted on 2-layer PCB of 70 X 70 X 1.6 mm3.
(PCB incorporates thermal via. Copper foil area on the front side of PCB: 10.5 X 10.5 mm2. Copper foil area on the reverse side of PCB: 70 X 70 mm2)
*3 Reduce by 5.52 mW/°C over 25°C, when mounted on 2-layer PCB of 70 X 70 X 1.6 mm3.
Recommended operating range
Parameter
Operating power supply voltage
Output switch current
Output voltage (ON Duty)
Oscillation frequency
Oscillation frequency set resistance
BD9778F/HFP
7 ~ 35
~2
6 ~ 100
50 ~ 500
40 ~ 800
BD9001F
7 ~ 48
~2
6 ~ 100
50 ~ 300
100 ~ 800
BD9781HFP
7 ~ 35
~4
6 ~ 100
50 ~ 500
39 ~ 800
Unit
V
A
%
kHz
k?
Possible operating range
Parameter
Operating power supply voltage
BD9778F/HFP
5 ~ 35
BD9001F
7 ~ 48
BD9781HFP
5 ~ 35
Unit
V
Electrical characteristics
BD9778F/HFP (Unless otherwise specified, Ta = -40?C to +125?C, V IN =13.2 V, V EN = 5 V)
Parameter
Standby circuit current
Circuit current
Symbol
I STB
I Q
Min.
-
-
Limits
Typ.
0
3
Max.
10
4.2
Unit
μA
mA
Condition
V EN =0V,Ta=25?C
I O =0A
[SW block]
POWER MOS FET ON resistance
Operating output current of overcurrent protection
Output leak current
R ON
I OLIMIT
I OLEAK
-
2
-
0.53
4
0
0.9
-
30
?
A
μA
I SW =50mA
* Design assurance
V IN =35V,V EN =0V
[Error Amp block]
Reference voltage 1
Reference voltage 2
Reference voltage input regulation
Input bias current
Maximum FB voltage
Minimum FB voltage
FB sink current
FB source current
Soft start time
V REF1
V REF2
?V REF
I B
V FBH
V FBL
I FBSINK
I FBSOURCE
T SS
0.98
0.96
-
-1
2.4
-
-5.0
70
-
1.00
1.00
0.5
-
2.5
0.05
-3.0
120
5
1.02
1.04
-
-
-
0.10
-0.5
170
-
V
V
%
μA
V
V
mA
μA
mS
V FB =V INV ,Ta=25?C
V FB =V INV
V IN =5 ~ 35V
V INV =1.1V
V INV =0.5V
V INV =1.5V
V FB =1.5V,V INV =1.5V
V FB =1.5V,V INV =0.5V
* Design assurance
[Oscillator block]
Oscillation frequency
Frequency input regulation
F OSC
?F OSC
82
-
102
1
122
-
kHz
%
R T =390k?
V IN =5 ~ 35V
[Enable block]
Threshold voltage
V EN
0.8
1.7
2.6
V
Sink current
I EN
-
13
50
μA
V EN =5V
* Not designed to be radiation-resistant.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
2/16
2010.02 - Rev. B
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