参数资料
型号: BF1204
厂商: NXP Semiconductors N.V.
元件分类: 功率晶体管
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;
文件页数: 5/13页
文件大小: 159K
代理商: BF1204
2010 Sep 16
5
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
ALL GRAPHS FOR ONE MOS-FET
handbook, halfpage
(mA)
0
2
0
4
8
12
16
0.4
0.8
1.2
1.6
VG1-S (V)
MCD952
VG2-S
=
4 V
2.5 V
3.5 V
3 V
2 V
1.5 V
1 V
Fig.3 Transfer characteristics; typical values.
V
DS
= 5 V.
T
j
= 25
C.
handbook, halfpage
0
10
0
8
16
2
VDS (V)
ID
(mA)
6
4
8
MCD953
VG1-S
=
1.5 V
1.4 V
1.2 V
1.3 V
1.1 V
1 V
0.9 V
Fig.4 Output characteristics; typical values.
V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
(
μ
A)
0
2.5
0
20
40
60
80
0.5
1
1.5
2
VG1-S (V)
MCD954
VG2-S
=
4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
Fig.5
Gate 1 current as a function of gate 1
voltage; typical values.
T
j
= 25
C.
V
DS
= 5 V.
handbook, halfpage
yfs
(mS)
0
ID (mA)
4
20
30
10
0
20
8
12
16
MCD955
3.5 V
2.5 V
3 V
2 V
VG2-S
=
4 V
Fig.6
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 5 V.
T
j
= 25
C.
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