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参数资料
| 型号： | BF1206 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 2/22页 |
| 文件大小： | 628K |
| 代理商： | BF1206 |
2003 Nov 17
2
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
analog television tuners.
DESCRIPTION
The BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor is
encapsulated in SOT363 micro-miniature plastic package.
PINNING - SOT363
PIN
DESCRIPTION
1
2
3
4
5
6
drain (b)
source
gate 1 (b)
gate 1 (a)
gate 2
drain (a)
handbook, halfpage
1
2
3
6
5
4
Top view
MAM480
Aa
d (a)
g2
g1 (a)
d (b)
s
g1 (b)
AMP
b
Fig.1 Simplified outline and symbol.
Marking code: L6-.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
y
fs
drain-source voltage
drain current (DC)
forward transfer admittance
33
29
102
38
34
2.4
1.7
15
105
6
30
48
44
2.9
2.2
V
mA
mS
mS
pF
pF
fF
dB
V
amp. a: I
D
= 18 mA
amp. b: I
D
= 12 mA
amp. a: I
D
= 18 mA; f = 1 MHz
amp. b: I
D
= 12 mA; f = 1 MHz
f = 1 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
amp. a: f = 400 MHz; I
D
= 18 mA
amp. b: f = 800 MHz; I
D
= 12 mA
amp. a: f = 11 MHz; I
D
= 18 mA
amp. b: f = 11 MHz; I
D
= 12 mA
C
ig1-s
input capacitance at gate 1
C
rss
X
mod
reverse transfer capacitance
cross-modulation
100
103
dB
V
NF
noise figure
1.3
1.4
3
3.5
1.9
2.0
dB
dB
dB
dB
相关PDF资料 |
PDF描述 |
|---|---|
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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