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| 型号： | BF1208 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 9/23页 |
| 文件大小： | 286K |
| 代理商： | BF1208 |
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
9 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz;
T
amb
= 25
C; see
Figure 33
.
Fig 12. Amplifier A: drain current as a function of gain
reduction; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 13. Amplifier A: input admittance as a function of
frequency; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 14. Amplifier A: forward transfer admittance and
phase as a function of frequency; typical
values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA
Fig 15. Amplifier A: reverse transfer admittance and
phase as a function of frequency; typical
values
gain reduction (dB)
0
50
40
20
30
10
001aac197
12
20
28
I
D
(mA)
4
001aac566
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
b
is
g
is
f (MHz)
10
10
3
10
2
001aac567
10
10
2
|y
fs
|
(mS)
1
10
10
2
fs
(deg)
1
|y
fs
|
fs
001aac568
10
2
10
10
3
|y
rs
|
(
μ
S)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
|y
rs
|
rs
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| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1208 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1208-03SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV07-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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