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参数资料
| 型号： | BF1211 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1211<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,; |
| 文件页数： | 6/16页 |
| 文件大小： | 415K |
| 代理商： | BF1211 |
2003 Dec 16
6
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
(mA)
0
2.5
0
5
10
15
20
0.5
1
1.5
2
VG1-S (V)
MDB829
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Fig.5 Transfer characteristics; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
0
2
4
0
8
16
6
MDB830
ID
(mA)
VDS (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Fig.6 Output characteristics; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
(1) V
G1-S
= 1.5 V.
(2) V
G1-S
= 1.4 V.
(3) V
G1-S
= 1.3 V.
(4) V
G1-S
= 1.2 V.
(5) V
G1-S
= 1.1 V.
(6) V
G1-S
= 1 V.
(7) V
G1-S
= 0.9 V.
(8) V
G1-S
= 0.8 V.
handbook, halfpage
(
μ
A)
0
0
20
40
60
80
0.5
1
1.5
2
MDB831
VG1-S (V)
(1)
(2)
(3)
(5)
(4)
(6)
(7)
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
yfs
(mS)
0
6
30
30
10
0
20
12
18
24
MDB832
ID (mA)
(1)
(2)
(3)
(4)
(5)
(6)
Fig.8
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1211 | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1211,215 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1211R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1211R,215 | 功能描述:射频MOSFET电源晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BF1211WR | 功能描述:MOSFET TAPE-7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BF1211WR,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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