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| 型号： | BF1211R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1211R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件页数： | 8/16页 |
| 文件大小： | 415K |
| 代理商： | BF1211R |
2003 Dec 16
8
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
handbook, halfpage
(
μ
A)
0
2
4
6
0
40
30
20
10
MDB837
VG2-S (V)
(1)
(2)
(3)
(4)
(5)
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
V
DS
= 5 V; T
j
= 25
C; R
G1
= 75 k
(connected to V
GG
); see Fig.21.
(1) V
GG
= 5 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3 V.
handbook, halfpage
reduction
(dB)
0
1
2
4
60
40
20
3
MDB838
10
50
30
VAGC (V)
Fig.14 Typical gain reduction as a function of AGC
voltage.
V
= 5 V; V
= 5 V; R
G1
= 75 k
(connected to V
GG
);
see Fig.21; f = 50 MHz; T
amb
= 25
C.
handbook, halfpage
Vunw
(dB
μ
V)
0
10
50
110
90
80
100
20
30
40
MDB839
gain reduction (dB)
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values.
V
= 5 V; V
= 5 V; R
G1
= 75 k
(connected to V
GG
);
see Fig.21; f = 50 MHz; f
unw
= 60 MHz; T
amb
= 25
C.
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
MDB840
gain reduction (dB)
Fig.16 Drain current as a function of gain
reduction; typical values.
V
= 5 V; V
= 5 V; R
G1
= 75 k
(connected to V
GG
);
see Fig.21; f = 50 MHz; T
amb
= 25
C.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1211WR | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212R | N-channel dual-gate MOSFET |
| BF1212WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1211R,215 | 功能描述:射频MOSFET电源晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| BF1211WR | 功能描述:MOSFET TAPE-7 MOS-RFSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| BF1211WR,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1211WR,135 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF1212 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
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