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参数资料
| 型号： | BF545B |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | JFETs |
| 英文描述： | N-channel FET |
| 封装： | BF545B<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 6, 2005,; |
| 文件页数： | 5/16页 |
| 文件大小： | 122K |
| 代理商： | BF545B |
BF545A_BF545B_BF545C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
5 of 16
NXP Semiconductors
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors)
8. Dynamic characteristics
Table 8.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
C
iss
input capacitance
Dynamic characteristics
Conditions
V
DS
= 15 V; f = 1 MHz
V
GS
=
10 V
V
GS
= 0 V
V
DS
= 15 V; f = 1 MHz
V
GS
=
10 V
V
GS
= 0 V
V
DS
= 10 V; I
D
= 1 mA
f = 100 MHz
f = 450 MHz
V
DS
= 10 V; I
D
= 1 mA
f = 100 MHz
f = 450 MHz
V
DS
= 10 V; I
D
= 1 mA
f = 100 MHz
f = 450 MHz
V
DS
= 10 V; I
D
= 1 mA
f = 100 MHz
f = 450 MHz
Min
Typ
Max
Unit
-
-
1.7
3
-
-
pF
pF
C
rss
reverse transfer capacitance
-
-
0.8
0.9
-
-
pF
pF
g
is
common source input
conductance
-
-
15
300
-
-
S
S
g
fs
common source transfer
conductance
-
-
2
1.8
-
-
mS
mS
g
rs
common source reverse
conductance
-
-
6
40
-
-
S
S
g
os
common source output
conductance
-
-
30
60
-
-
S
S
V
DS
= 15 V; T
j
= 25
C.
Drain current as a function of gate-source
cut-off voltage; typical values.
V
DS
= 15 V; V
GS
= 0 V; T
j
= 25
C.
Forward transfer admittance as a function of
gate-source cut-off voltage; typical values.
Fig 2.
Fig 3.
V
GSoff
(V)
0
8
6
2
4
mbb467
10
20
30
I
DSS
(mA)
0
V
GSoff
(V)
0
8
6
2
4
mbb466
5
4.5
5.5
6
Y
fs
(mS)
4
相关PDF资料 |
PDF描述 |
|---|---|
| BF545C | N-channel FET |
| BF556A | N-channel FET |
| BF556B | N-channel FET |
| BF556C | N-channel FET |
| BF861A | N-channel FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF545B,215 | 功能描述:射频JFET晶体管 N-Channel Single ’+/- 30V 2mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| BF545C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel silicon junction field-effect transistors |
| BF545C,215 | 功能描述:射频JFET晶体管 JFET N-CH 30V 10MA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| BF545C,215-CUT TAPE | 制造商:NXP 功能描述:BF545C Series 30 V 250 mW N-Channel Silicon Junction Field-Effect Transistor |
| BF545C215 | 制造商:NXP Semiconductors 功能描述:RF JFET N CH 30V 25MA 3-SO 制造商:NXP Semiconductors 功能描述:JET N CH 30V SOT-23 |
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