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参数资料
| 型号： | BFR520T |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFR520T<SOT416 (SOT416)|<<http://www.nxp.com/packages/SOT416.html<1<week 17, 2003,; |
| 文件页数： | 3/13页 |
| 文件大小： | 272K |
| 代理商： | BFR520T |
2000 Apr 03
3
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR520T
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero and
2
-------------------------------------------------------- dB
=
2.
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
; f = 900 MHz; T
amb
= 25
C; f
p
= 900 MHz; f
q
= 902 MHz; measured at
f
(2p
q)
= 898 MHz and at f
(2q
p)
= 904 MHz.
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
60
TYP.
120
1
0.5
0.4
9
MAX.
UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
collector cut-off current
DC current gain
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CE
= 6 V
I
C
= 20 mA; V
CE
= 6 V
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
E
= i
e
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 0; V
CB
= 6 V; f = 1 MHz
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz; T
amb
= 25
C
s
=
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
;
f = 900 MHz; T
amb
= 25
C
note 2
50
250
nA
pF
pF
pF
GHz
G
UM
maximum unilateral power
gain; note 1
15
dB
9
dB
s
21
2
insertion power gain
13
14
dB
F
noise figure
1.1
1.6
dB
1.6
2.1
dB
1.9
dB
P
L1
output power at 1 dB gain
compression
third order intercept point
17
dBm
ITO
26
dBm
G
UM
10 log
s
1
1
s
11
–
s
22
2
–
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