- 您现在的位置：买卖IC网 > PDF目录378415 > BFR92A (NXP Semiconductors N.V.) NPN 5 GHz wideband transistor PDF资料下载
参数资料
| 型号： | BFR92A |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封装： | BFR92A/A2<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,;BFR92A/A2<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free |
| 文件页数： | 2/12页 |
| 文件大小： | 277K |
| 代理商： | BFR92A |
NXP
Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
High power gain
Low noise figure
Low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
page
MSB003
Top view
1
2
3
Marking code:
P2
%
.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain
0.35
5
14
20
15
25
300
V
V
mA
mW
pF
GHz
dB
T
s
≤
95
°
C
I
C
= i
c
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 1 GHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 10 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 10 V; f = 1 GHz;
Γ
s
=
Γ
opt
; T
amb
= 25
°
C
d
im
=
60 dB; I
C
= 14 mA; V
CE
= 10 V;
R
L
= 75
; f
p
+ f
q
f
r
= 793.25 MHz
8
dB
F
noise figure
2.1
dB
V
O
output voltage
150
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
20
15
2
25
300
+150
175
V
V
V
mA
mW
°
C
°
C
T
s
≤
95
°
C; note 1; see Fig.3
Rev. 04 - 2 March 2009
2 of 12
相关PDF资料 |
PDF描述 |
|---|---|
| BFR92A | NPN 5 GHz wideband transistor |
| BFR92A | NPN 5 GHz wideband transistor |
| BFR93AR | NPN 6 GHz wideband transistor |
| BFR93AR | NPN 6 GHz wideband transistor |
| BFR93AR | NPN 6 GHz wideband transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR92A(TR) | 制造商:PHI 功能描述:PHILIPS |
| BFR92A,215 | 功能描述:射频双极小信号晶体管 NPN 25MA 15V 5GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR92A,235 | 功能描述:射频双极小信号晶体管 Single NPN 15V 25mA 300mW 65 5GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR92A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
| BFR92A/DG/B2,215 | 制造商:NXP Semiconductors 功能描述:PHABFR92A/DG/B2,215 NPN 5 GHZ WIDEBAND T |
发布紧急采购，3分钟左右您将得到回复。