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参数资料
| 型号： | BFR93A |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 封装： | BFR93A<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR93A<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件页数： | 2/13页 |
| 文件大小： | 269K |
| 代理商： | BFR93A |
1997 Oct 29
2
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFR93A
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
Marking code:
R2p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
0.6
6
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain I
C
= 30 mA; V
CE
= 8 V; f = 1 GHz; T
amb
= 25
C 13
I
C
= 30 mA; V
CE
= 8 V; f = 2 GHz; T
amb
= 25
C 7
noise figure
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
s
=
opt
;
T
amb
= 25
C
output voltage
d
im
=
60 dB; I
C
= 30 mA; V
CE
= 8 V;
R
L
= 75
; T
amb
= 25
C;
f
p
+ f
q
f
r
= 793.25 MHz
open emitter
open base
15
12
35
300
V
V
mA
mW
pF
GHz
dB
dB
dB
T
s
95
C
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
F
1.9
V
O
425
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
15
12
2
35
300
+150
+175
V
V
V
mA
mW
C
C
T
s
95
C; note 1
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| BFR93A | NPN 6 GHz wideband transistor |
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| BFR94AW | NPN 5 GHz wideband transistor |
| BFR94AW | NPN 5 GHz wideband transistor |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BFR93A T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 12V 0.035A 3-Pin TO-236AB T/R |
| BFR93A,215 | 功能描述:射频双极小信号晶体管 NPN 35MA 12V 6GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR93A,215-CUT TAPE | 制造商:NXP 功能描述:BFR93A Series 8 V 300 mW 6 GHz Wideband NPN Transistor - SOT23 |
| BFR93A,235 | 功能描述:射频双极小信号晶体管 Single NPN 12V 35mA 300mW 40 6GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFR93A | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN RF SOT-23 |
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