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| 型号： | BFR93A |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 6 GHz wideband transistor |
| 封装： | BFR93A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR93A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件页数： | 3/13页 |
| 文件大小： | 269K |
| 代理商： | BFR93A |
1997 Oct 29
3
NXP Semiconductors
Product specification
NPN 6 GHz wideband transistor
BFR93A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
2.
3.
Measured on the same die in a SOT37 package (BFR91A).
d
im
=
60 dB (DIN 45004B); I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= V
O
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
6 dB at f
q
= 803.25 MHz;
V
r
= V
O
6 dB at f
r
= 805.25 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz.
I
C
= 30 mA; V
CE
= 8 V; R
L
= 75
; T
amb
= 25
C;
V
p
= 200 mV at f
p
= 250 MHz;
V
q
= 200 mV at f
q
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz.
4.
SYMBOL
PARAMETER
CONDITIONS
T
s
95
C; note 1
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
TYP.
90
0.7
1.9
0.6
MAX.
UNIT
I
CBO
h
FE
C
c
C
e
C
re
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
I
E
= 0; V
CB
= 5 V
I
C
= 30 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 5 V; f = 500 MHz
I
C
= 30 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 30 mA; V
CE
= 8 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 5 mA; V
CE
= 8 V; f = 1 GHz;
s
=
opt
; T
amb
= 25
C
I
C
= 5 mA; V
CE
= 8 V; f = 2 GHz;
s
=
opt
; T
amb
= 25
C
notes 2 and 3
notes 2 and 4
50
nA
pF
pF
pF
f
T
G
UM
transition frequency
maximum unilateral power gain
(note 1)
4.5
6
13
GHz
dB
7
dB
F
noise figure (note 2)
1.9
dB
3
dB
V
O
d
2
output voltage
second order intermodulation
distortion
425
50
mV
dB
G
UM
10 log
S
2
1
2
1
S
11
–
S
22
2
–
----------------------------------------------------------dB
=
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