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| 型号： | BFU725F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU725F/N1<SOT343F (DFP4)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 5/12页 |
| 文件大小： | 136K |
| 代理商： | BFU725F |
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
5 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
[1]
G
p(max)
is the maximum power gain, if K
1. If K
1 then G
p(max)
= MSG.
P
L(1dB)
output power at 1 dB gain
compression
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 25 mA; V
CE
= 2 V; Z
S
= Z
L
= 50
; T
amb
= 25
C;
f
2
= f
1
+ 1 MHz
f
1
= 1.5 GHz
f
1
= 1.8 GHz
f
1
= 2.4 GHz
f
1
= 5.8 GHz
-
-
-
-
8.5
9
8.5
8
-
-
-
-
dBm
dBm
dBm
dBm
IP3
third-order intercept point
-
-
-
-
17
17
17
19
-
-
-
-
dBm
dBm
dBm
dBm
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
Characteristics
…continued
Conditions
Min Typ
Max Unit
T
amb
= 25
C.
(1) I
B
= 110
A
(2) I
B
= 100
A
(3) I
B
= 90
A
(4) I
B
= 80
A
(5) I
B
= 70
A
(6) I
B
= 60
A
(7) I
B
= 50
A
(8) I
B
= 40
A
(9) I
B
= 30
A
(10) I
B
= 20
A
(11) I
B
= 10
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
T
amb
= 25
C.
(1) V
CE
= 1 V
(2) V
CE
= 1.5 V
(3) V
CE
= 2 V
Fig 3.
DC current gain a function of collector current;
typical values
V
CE
(V)
0
2.5
0.5
2.0
3.0
1.5
1.0
3.5
001aak271
10
20
30
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
001aak272
I
C
(mA)
0
30
20
10
300
250
350
400
h
FE
200
(1)
(2)
(3)
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| BFU725F,115 | 功能描述:射频双极小信号晶体管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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| BFU725F/N1,115 | 功能描述:射频双极小信号晶体管 2.8V 0.04A 4-Pin Trans GP BJT NPN RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
| BFU725F/N1,115-CUT TAPE | 制造商:NXP 功能描述:BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU725F_11 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
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