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| 型号： | BFU730F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU730F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 4/12页 |
| 文件大小： | 128K |
| 代理商： | BFU730F |
BFU730F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
4 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
collector current
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
C
CBS
collector-base capacitance
f
T
transition frequency
Characteristics
Conditions
I
C
= 2.5
μ
A; I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
Min Typ
10
2.8
-
-
205
-
-
-
-
Max Unit
-
-
30
100
555
-
-
-
-
-
-
5
-
380
206
442
55
55
V
V
mA
nA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 2 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 17 mA; V
CE
= 2 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 17 mA; V
CE
= 2 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 5 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 5 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
fF
fF
fF
GHz
G
p(max)
maximum power gain
[1]
-
-
-
-
-
29
28
26.5
18.5
12.5
-
-
-
-
-
dB
dB
dB
dB
dB
|
s
21
|
2
insertion power gain
-
-
-
-
-
27
25.5
23.5
16
10.5
-
-
-
-
-
dB
dB
dB
dB
dB
NF
noise figure
-
-
-
-
-
0.50
0.50
0.55
0.80
1.30
-
-
-
-
-
dB
dB
dB
dB
dB
G
ass
associated gain
-
-
-
-
-
25.0
23.5
21.5
15.0
11.0
-
-
-
-
-
dB
dB
dB
dB
dB
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