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参数资料
| 型号： | BFU730F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU730F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 7/12页 |
| 文件大小： | 128K |
| 代理商： | BFU730F |
BFU730F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
7 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
V
CE
= 2 V; I
C
= 5 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
V
CE
= 2 V; I
C
= 17 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
Fig 7.
Fig 8.
V
CE
= 2 V; T
amb
= 25
°
C.
(1) f = 12 GHz
(2) f = 5.8 GHz
(3) f = 2.4 GHz
(4) f = 1.8 GHz
(5) f = 1.5 GHz
I
C
= 5 mA; V
CE
= 2 V; T
amb
= 25
°
C.
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0
25
20
10
15
5
001aam858
20
30
10
40
50
G
(dB)
0
MSG
MSG
G
p(max)
IS21I
2
f (GHz)
0
25
20
10
15
5
001aam859
20
30
10
40
50
G
(dB)
0
MSG
MSG
G
p(max)
IS21I
2
001aam860
I
C
(mA)
0
15
10
5
1.0
0.5
1.5
2.0
NF
min
(dB)
0
(3)
(4)
(5)
(2)
(1)
f (GHz)
14
10
2
12
8
4
0
6
001aam861
1.0
0.5
1.5
2.0
NF
min
(dB)
0
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| BFU730F | NPN wideband silicon germanium RF transistor |
| BFU730F | NPN wideband silicon germanium RF transistor |
| BFU730F | NPN wideband silicon germanium RF transistor |
| BFU730F | NPN wideband silicon germanium RF transistor |
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相关代理商/技术参数 |
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| BFU730F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| BFU730F,115-CUT TAPE | 制造商:NXP 功能描述:BFU730 Series 2.8 V 12.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4 |
| BFU730LXZ | 制造商:NXP Semiconductors 功能描述:BFU730LX/XQFN3/SMBPSMDLPR// - Bulk 制造商:NXP Semiconductors 功能描述:TRANS RF NPN 3V 30MA XQFN3 制造商:NXP Semiconductors 功能描述:SiGe:C MMIC Transistor |
| BFU760F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU760F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
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