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参数资料
| 型号： | BFU730F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU730F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 2/12页 |
| 文件大小： | 128K |
| 代理商： | BFU730F |
BFU730F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
2 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
[1]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
[2]
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Typ
-
-
-
5
-
380
Max
10
2.8
1.0
30
197
555
Unit
V
V
V
mA
mW
T
sp
≤
90
°
C
I
C
= 2 mA; V
CE
= 2 V;
T
j
= 25
°
C
V
CB
= 2 V; f = 1 MHz
[1]
-
205
C
CBS
collector-base
capacitance
transition frequency
-
55
-
fF
f
T
I
C
= 25 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
°
C
I
C
= 17 mA; V
CE
= 2 V;
f = 12 GHz; T
amb
= 25
°
C
I
C
= 5 mA; V
CE
= 2 V;
f = 12 GHz;
Γ
S
=
Γ
opt
I
C
= 15 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
;
f = 5.8 GHz; T
amb
= 25
°
C
-
55
-
GHz
G
p(max)
maximum power gain
[2]
-
12.5
-
dB
NF
noise figure
-
1.30
-
dB
P
L(1dB)
output power at 1 dB
gain compression
-
12.5
-
dBm
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
1
2
3
4
mbb159
4
1, 3
2
Ordering information
Package
Name
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU730F
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