参数资料
型号: BFU730F
厂商: NXP Semiconductors N.V.
元件分类: 晶体管
英文描述: NPN wideband silicon germanium RF transistor
封装: BFU730F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,;
文件页数: 3/12页
文件大小: 128K
代理商: BFU730F
BFU730F
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
3 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
Type number
BFU730F
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Marking
Marking
D6*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
10
2.8
1.0
30
197
+150
150
Unit
V
V
V
mA
mW
°
C
°
C
T
sp
90
°
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
304
Unit
K/W
Fig 1.
Power derating curve
T
sp
(
°
C)
0
160
120
40
80
001aam852
100
150
50
200
250
P
tot
(mW)
0
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