- 您现在的位置：买卖IC网 > PDF目录378417 > BFU760F (NXP Semiconductors N.V.) NPN wideband silicon germanium RF transistor PDF资料下载
参数资料
| 型号： | BFU760F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU760F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 4/12页 |
| 文件大小： | 122K |
| 代理商： | BFU760F |
BFU760F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
4 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
collector current
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
C
CBS
collector-base capacitance
f
T
transition frequency
Characteristics
Conditions
I
C
= 2.5
μ
A; I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
Min Typ
10
2.8
-
-
155
-
-
-
-
Max Unit
-
-
70
100
505
-
-
-
-
-
-
25
-
330
292
1054
175
45
V
V
mA
nA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 50 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 50 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 12 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 12 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
fF
fF
fF
GHz
G
p(max)
maximum power gain
[1]
-
-
-
-
25.5
24
22
13.5
-
-
-
-
dB
dB
dB
dB
|
s
21
|
2
insertion power gain
-
-
-
-
22
20.5
18
10.5
-
-
-
-
dB
dB
dB
dB
NF
noise figure
-
-
-
-
0.40
0.45
0.50
0.75
-
-
-
-
dB
dB
dB
dB
G
ass
associated gain
-
-
-
-
23
21.5
19.5
12.5
-
-
-
-
dB
dB
dB
dB
P
L(1dB)
output power at 1 dB gain compression
-
-
-
-
18
18
17
18.5
-
-
-
-
dBm
dBm
dBm
dBm
相关PDF资料 |
PDF描述 |
|---|---|
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BFU760F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
| BFU760F,115-CUT TAPE | 制造商:NXP 功能描述:BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4 |
| BFU768F,115 | 制造商:NXP Semiconductors 功能描述:BFU768F/DFP4/REEL7// - Tape and Reel 制造商:NXP Semiconductors 功能描述:TRANS RF NPN 2.8V 70MA DFP4 制造商:NXP Semiconductors 功能描述:Transistors RF Bipolar 4-pin Dual-Emitter Microwave Transistor |
| BFU790F | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU790F,115 | 功能描述:射频硅锗晶体管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 发射极 - 基极电压 VEBO: 集电极连续电流: 功率耗散: 安装风格: 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。