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参数资料
| 型号： | BFY90 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 封装： | TO-72, 4 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 17K |
| 代理商： | BFY90 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
nA
V
—
GHz
pF
dB
mW
10
15
30
0.75
25
150
20
125
1
1.3
1.5
0.8
4
3.5
5
21
10
BFY90
Prelim. 12/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
ICBO
V(BR)CEO*
V(BR)CER*
VCEK
h21E
fT
C22b(1)
C12e(2)
NF
Gp
PO(2)
Collector Cut Off Current
Collector Emitter Breakdown Voltage
Collector Emitter Knee Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Open-Circuit Reverse Transfer
Capacitance
Noise Figure
Power Gain
Output Power
VCB = 15V
IE = 0
IC = 10mA
IB = 0
IC = 10mA
RBE 50W
IC = 10mA
VCE = 1V
IC = 2mA
VCE = 1V
IC = 25mA
VCE = 5V
IC = 2mA
f = 500MHz
VCE = 5V
IC = 25mA
f = 500MHz
VCB = 10V
IE = 0.
f = 1MHz
VCE = 5V
IC = 0
f = 1MHz
VCE = 5V
IC = 2mA
f = 100kHz
RG optimum
VCE = 5V
IC = 2mA
f = 200MHz
RG optimum
VCE = 5V
IC = 2mA
f = 500MHz
RG = 50W
VCE = 5V
IC = 2mA
f = 800MHz
RG optimum
VCE = 10V
IC = 14mA
f = 200MHz
VCE = 10V
IC = 14mA
f1 = 202MHz
f2= 205MHz
Output SWR
2
TOS sortie
2
dIM* = - 30dB at 2 f2 - f1 =
208MHz
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
* Pulse test tp = 300ms , d 2%
(1) Shield Lead (case) not connected
(2) Shield Lead (case) grounded
* Intermodulation Distortion
Rth(j-a)
Rth(j-c)
0.875 Max
0.575 Max
Junction-ambient thermal resistance
Junction-case thermal resistance
°C/W
THERMAL DATA
DYNAMIC CHARACTERISTICS
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