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参数资料
| 型号： | BH12PB1WHFV-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 8/13页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 1.2V .15A HVSOF5 |
| 特色产品： | CMOS LDO Regulators |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 1.2V |
| 输入电压： | 1.7 V ~ 5.5 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小值） |
| 电流 - 限制（最小）： | 160mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-665 |
| 供应商设备封装： | 5-HVSOF |
| 包装： | 标准包装 |
| 其它名称： | BH12PB1WHFV-DKR BH12PB1WHFV-DKR-ND BH12PB1WHFVDKR |
BH □□ PB1WHFV Series
Technical Note
● Notes for use
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Ground wiring patterns
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage
on the power ground line may damage the device.
6. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
7. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
8. Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
STBY
GND
OUT
Fig.32 Example Bypass Diode Connection
9. I/O voltage difference
Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV)
may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high
state when the voltage differential is saturated.
10. GND Voltage
The potential of GND pin must be minimum potential in all operating conditions.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
8/10
2011.01 - Rev.B
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