参数资料
| 型号： | BH25RB1WGUT-E2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 2.5V .15A 4-VCSP |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 2.5V |
| 输入电压： | 最高 5.5V |
| 电压 - 压降（标准）： | 0.1V @ 100mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA（最小值） |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-WFBGA，CSPBGA |
| 供应商设备封装： | VCSP60N1 |
| 包装： | 标准包装 |
| 产品目录页面： | 1374 (CN2011-ZH PDF) |
| 其它名称： | BH25RB1WGUT-E2DKR |
BH □□ RB1WGUT series
● Block Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram
Technical Note
BH RB1WGUT
Pin No.
Symbol
Function
VIN
VIN
B2
B2
B1
V IN
V OUT
Power supply input
Voltage output
VO LTAG E
Cin
R EF ERE NCE
VOUT
VOUT
A1
GND
Ground
B1
G ND
A1
TH ERM A L
P RO T ECT IO N
Co
A2
STBY
Output voltage on/off control
(High: ON, Low: OFF)
VSTBY
STBY
A2
O VER CU RRE NT
P RO TE CTIO N
C O NT RO L
BLO CK
1PIN MARK
A
1
2
Cin: 1.0 μF
Co: 1.0 μF
Fig. 24
B
TOP VIEW (Mark side)
● Power Dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In
the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the
junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the
IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (P MAX )
P MAX = (V IN - V OUT ) ? I OUT (MAX.)
V IN : Input voltage
V OUT : Output voltage
I OUT (MAX): Output current
2. Power dissipation/power dissipation reduction (Pd)
VCSP60N1
0.6
530 mW
Board: 7 mm ? 7 mm ? 0.8 mm
Material: Glass epoxy PCB
0.4
0.2
0
0
25
50
75
100
125
Ta[ ℃ ]
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
● Input Output Capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as
stable high voltages.
Typical ceramic capacitor characteristics
120
100
120
100
50 V
torelance
95
50 V torelance
100
X7R
80
60
40
20
0
10 V torelance
16 V torelance
90
85
80
75
70
16 V torelance
10 V torelance
80
60
40
20
0
Y5V
X5R
0
1
2
DC bias Vdc (V)
3
4
0
1
2
DC bias Vdc (V)
3
4
-25
0
25
Temp[ ℃ ]
50
75
Fig. 26 Capacitance vs Bias (Y5V)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Fig.27 Capacitance vs Bias
(X5R, X7R)
5/8
Fig. 28 Capacitance vs Temperature
(X5R, X7R, Y5V)
2011.01 - Rev.C
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