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参数资料
| 型号： | BH7824FVM-TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | IC AMP HDPH/SPEAKER UNBAL 8MSOP |
| 标准包装： | 3,000 |
| 类型： | AB 类 |
| 输出类型： | 1-通道（单声道） |
| 在某负载时最大输出功率 x 通道数量： | 500mW x 1 @ 8 欧姆 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 特点： | 消除爆音，关机，热保护 |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 8-MSOP |
| 封装/外壳： | 8-VSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 包装： | 带卷 (TR) |
74AHC_AHCT1G08_6
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 06 — 29 June 2007
5 of 11
NXP Semiconductors
74AHC1G08; 74AHCT1G08
2-input AND gate
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
Typical values are measured at VCC = 3.3 V.
[3]
Typical values are measured at VCC = 5.0 V.
[4]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
ICC
supply current VI =VCC or GND; IO = 0 A;
VCC = 5.5 V
-
1.0
-
10
-
40
A
ICC
additional
supply current
per input pin; VI = 3.4 V;
other inputs at VCC or GND;
IO = 0 A; VCC = 5.5 V
-
1.35
-
1.5
-
1.5
mA
CI
input
capacitance
-
1.5
10
-
10
-
10
pF
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 8.
Dynamic characteristics
Symbol
Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G08
tpd
propagation
delay
A and B to Y;
see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
4.6
8.8
1.0
10.5
1.0
12.0
ns
CL = 50 pF
-
6.5
12.3
1.0
14.0
1.0
16.0
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.2
5.9
1.0
7.0
1.0
8.0
ns
CL = 50 pF
-
4.6
7.9
1.0
9.0
1.0
10.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-17-
-
pF
For type 74AHCT1G08
tpd
propagation
delay
A and B to Y;
see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.6
6.2
1.0
7.1
1.0
8.0
ns
CL = 50 pF
-
5.1
7.9
1.0
9.0
1.0
10.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-19-
-
pF
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