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参数资料
| 型号： | BPW76A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor Chip Silicon 850nm 3-Pin TO-206AA |
| 中文描述： | Photodetector Transistors NPN Phototransistor 80V 250mW 850nm |
| 文件页数： | 1/5页 |
| 文件大小： | 134K |
| 代理商： | BPW76A |
Silicon NPN Phototransistor, RoHS Compliant
www.vishay.com
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
398
Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Vishay Semiconductors
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
FEATURES
Package type: leaded
Package form: TO-18
Dimensions (in mm): 4.7
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 40°
Base terminal connected
Hermetically sealed package
Flat glass window
Lead
(Pb)-free
component
in
accordance
with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8401
PRODUCT SUMMARY
COMPONENT
Ica (mA)
(deg)
λ
0.1 (nm)
BPW76A
0.4 to 0.8
± 40
450 to 1080
BPW76B
> 0.6
± 40
450 to 1080
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
BPW76A
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
BPW76B
Bulk
MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Collector base voltage
VCBO
80
V
Collector emitter voltage
VCEO
70
V
Emitter base voltage
VEBO
5V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Total power dissipation
Tamb ≤ 25 °C
PV
250
mW
Junction temperature
Tj
125
°C
Operating temperature range
Tamb
- 40 to + 125
°C
Storage temperature range
Tstg
- 40 to + 125
°C
Soldering temperature
t
≤ 5 s
Tsd
260
°C
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm2
RthJA
400
K/W
Thermal resistance junction/gase
RthJC
150
K/W
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| BPW85A | Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BPW76A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW76A_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW76B | 功能描述:光电晶体管 NPN Phototransistor 80V 250mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| BPW77 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW77A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
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