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参数资料
| 型号： | BPW76B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor Chip Silicon 850nm 3-Pin TO-206AA |
| 中文描述： | Photodetector Transistors NPN Phototransistor 80V 250mW 850nm |
| 文件页数： | 2/5页 |
| 文件大小： | 134K |
| 代理商： | BPW76B |
Document Number: 81526
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.4, 08-Sep-08
399
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
0
25
50
75
100
0
200
400
800
150
94 8342
600
125
RthJC
RthJA
Tamb - Ambient Temperature (°C)
P
-Total
Po
w
er
Dissipation
(m
W
)
tot
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector emitter breakdown voltage
IC = 1 mA
V(BR)CEO
70
V
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
1
100
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
6pF
Angle of half sensitivity
± 40
deg
Wavelength of peak sensitivity
λ
p
850
nm
Range of spectral bandwidth
λ
0.1
450 to
1080
nm
Collector emitter saturation voltage
Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA
VCEsat
0.15
0.3
V
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100 Ω
ton
6s
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100 Ω
toff
5s
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100 Ω
fc
110
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector light current
Ee = 1 mW/cm2, λ = 950 nm,
VCE = 5 V
BPW76A
Ica
0.4
0.8
mA
BPW76B
Ica
0.6
mA
94 8343
20
100
101
102
103
104
106
105
150
50
100
VCE = 20 V
E=0
I
-Collector
Dark
C
u
rrent
(nA)
CEO
Tamb - Ambient Temperature (°C)
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0
1020 3040 5060 70 80 90 100
94 8344
V
= 5V
λ = 950 nm
CE
E e = 1 mW/cm2
I
-Relati
v
e
Collector
C
u
rrent
ca
rel
Tamb - Ambient Temperature (°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BPW77 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW77A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| BPW77B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| BPW77N | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW77NA | 功能描述:光电晶体管 10 Degree 250mW RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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