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参数资料
| 型号： | BPW77NB |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor IR Chip Silicon 850nm 3-Pin TO-206AA |
| 中文描述： | Photodetector Transistors NPN Phototransistor 850nm +/-10 Deg |
| 文件页数： | 3/5页 |
| 文件大小： | 133K |
| 代理商： | BPW77NB |
www.vishay.com
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81527
404
Rev. 1.5, 08-Sep-08
BPW77NA, BPW77NB
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
0.01
0.1
1
0.01
0.1
1
10
100
10
94 8349
VCE =5 V
= 950 nm
BPW77NB
BPW77NA
λ
Ee - Irradiance (mW/cm2)
I
-Collector
Light
C
u
rrent
(mA)
ca
0.1
1
10
0.1
1
10
100
94 8350
= 950 nm
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
0.02 mW/cm2
λ
I
-Collector
Light
C
u
rrent
(mA)
ca
VCE - Collector Emitter Voltage (V)
0.1
1
10
0
4
8
12
16
20
C
CEO
-
Collector
Ermitter
Capacitance
(pF)
V
CE - Collector Ermitter Voltage (V)
100
94 8247
f = 1 MHz
16
12
8
4
0
94 8253
0
2
4
6
8
12
t on
/t
off
-
T
u
rn-on/T
u
rn-off
Time
(
s)
I
C - Collector Current (mA)
10
V
CE = 5 V
R
L = 100 Ω
λ = 950 nm
t
off
t
on
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
(
λ
) rel
-
Relati
v
e
Spectral
Sensiti
v
ity
λ - Wavelength (nm)
94 8348
800
0.4
0.2
0
0.2
0.4
S
rel
-
Relati
v
e
Sensiti
v
ity
0.6
94 8351
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
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