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参数资料
| 型号： | BPW85A |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor Chip Silicon 850nm 2-Pin T-1 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 100mW 850nm |
| 文件页数： | 4/6页 |
| 文件大小： | 106K |
| 代理商： | BPW85A |
BPW85A, BPW85B, BPW85C
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 23-Aug-11
4
Document Number: 81531
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Collector Emitter Capacitance vs.
Collector Emitter Voltage
Fig. 8 - Turn-on/Turn-off Time vs. Collector Current
Fig. 9 - Relative Spectral Sensitivity vs. Wavelength
Fig. 10 - Relative Radiant Sensitivity vs. Angular Displacement
0.1
10
1
0
2
4
6
8
10
100
f = 1 MHz
C
CEO
-
Collector
Emitter
Capacitance
(pF)
VCE - Collector Emitter Voltage (V)
94 8294
0
2
4
6
8
10
12
14
2
8
6
4
V
CE = 5 V
R
L = 100 Ω
λ = 950 nm
t
off
t
on
IC - Collector Current (mA)
t on
/t
off
-
T
u
rn-on/T
u
rn-off
Time
(s)
94 8293
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
(
λ
) rel
-
Relati
v
e
Spectral
Sensiti
v
ity
λ - Wavelength (nm)
94 8348
800
0.4
0.2
0
94 8295
0.6
0.9
0.8
0°
30°
10°
20°
0.7
1.0
40°
50°
70°
60°
80°
S
rel
-
Relati
v
e
Radiant
Sensiti
v
ity
-
Ang
u
lar
Displacement
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BPW85A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85B | 功能描述:光电晶体管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| BPW85B | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85C | 功能描述:光电晶体管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| BPW85C | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 |
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