参数资料
型号: BQ2002ESNTR
厂商: Texas Instruments
文件页数: 7/15页
文件大小: 0K
描述: IC CONTROLLER FASTCHRGE 8-SOIC
标准包装: 2,500
功能: 充电管理
电池化学: 镍镉(NiCd)、镍金属氢化物(NiMH)
电源电压: 4 V ~ 6 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
配用: 296-9488-ND - EVAL MOD FOR BQ2002
bq2002E/G
Absolute Maximum Ratings
Symbol
V CC
V T
Parameter
V CC relative to V SS
DC voltage applied on any pin
Minimum
-0.3
-0.3
Maximum
+7.0
+7.0
Unit
V
V
Notes
excluding V CC relative to V SS
T OPR
T STG
T SOLDER
T BIAS
Operating ambient temperature
Storage temperature
Soldering temperature
Temperature under bias
0
-40
-
-40
+70
+85
+260
+85
°C
°C
°C
°C
Commercial
10 sec max.
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds
(TA = 0 to 70°C; VCC ± 20%)
Symbol
V TCO
V HTF
Parameter
Temperature cutoff
High temperature fault
Rating
0.5 * V CC
0.6 ? VCC
Tolerance
± 5%
± 5%
Unit
V
V
Notes
V TS ≤ V TCO inhibits/terminates
fast charge and top-off
V TS < V HTF inhibits fast charge
start
V MCV
Maximum cell voltage
2
± 5%
V
V BAT ≥ V MCV inhibits/terminates
fast charge and top-off
V LBAT
Minimum cell voltage
0.175 ? V CC
± 20%
V
V BAT < V LBAT inhibits fast charge
start
- ? V
PVD
BAT input change for
- ? V detection
BAT input change for
-12
-2.5
± 3
± 2.5
mV
mV
PVD detection
7
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