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| 型号： | BQ2057CDGKRG4 |
| 厂商： | Texas Instruments |
| 文件页数： | 16/31页 |
| 文件大小： | 0K |
| 描述： | IC LI-ION LDO CHRG MGMT 8-MSOP |
| 标准包装： | 2,500 |
| 功能： | 充电管理 |
| 电池化学： | 锂离子（Li-Ion）、锂聚合物（Li-Pol） |
| 电源电压： | 4.5 V ~ 15 V |
| 工作温度： | -20°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
| 配用： | 296-9501-ND - EVAL MOD FOR BQ2057C |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页当前第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页
bq2057, bq2057C
bq2057T, bq2057W
SLUS025F ? MAY 2001 ? REVISED JULY 2002
APPLICATION INFORMATION
selecting an external pass-transistor (continued)
P-channel MOSFET:
Selection steps for a P-channel MOSFET: Example: V I = 5.5 V, I (REG) = 500 mA, 4.2-V single-cell Li?Ion
(bq2057C). V I is the input voltage to the charger and I (REG) is the desired charge current. (See Figure 4.)
1. Determine the maximum power dissipation, P D , in the transistor.
The worst case power dissipation happens when the cell voltage, V (BAT) , is at its lowest (typically 3 V at
the beginning of current regulation phase) and V I is at its maximum.
Where V D is the forward voltage drop across the reverse-blocking diode (if one is used), and V CS is the
voltage drop across the current sense resistor.
P D = (V I – V D ? V (CS) – V (BAT) ) × I (REG)
(10)
P D = (5.5 – 0.4 – 0.1 ?3) × 0.5 A
P D = 1 W
2. Determine the package size needed in order to keep the junction temperature below the manufacturer ’s
recommended value, T JMAX . Calculate the total theta, θ ( ° C/W), needed.
max(J)
D
θ
JC
+
T
–T
P
A(max)
(11)
θ
JC
+
(150–40)
1
θ
JC
+ 110 ° C W
Now choose a device package with a theta at least 10% below this value to account for additional thetas
other than the device. A TSSOP-8 package, for instance, has typically a theta of 70 ° C/W.
3. Select a drain-source voltage, V (DS) , rating greater than the maximum input voltage. A 12 V device will be
adequate in this example.
4. Select a device that has at least 50% higher drain current (I D ) rating than the desired charge current I (REG) .
5. Verify that the available drive is large enough to supply the desired charge current.
V (GS) = (V D +V (CS) + V OL(CC) ) ? V I
(12)
V (GS) = (0.4 + 0.1 + 1.5) – 5.5
V (GS) = ?3.5
Where V (GS) is the gate-to-source voltage, V D is the forward voltage drop across the reverse-blocking diode
(if one is used), and V CS is the voltage drop across the current sense resistor, and V OL(CC) is the CC pin
output low voltage specification for the bq2057.
Select a MOSFET with gate threshold voltage, V (GSth) , rating less than the calculated V (GS) .
Now choose a P-channel MOSFET transistor that is rated for VDS ≤ ?15 V, θ JC ≤ 110 ° C/W, I D ≥ 1 A,
V (GSth) ≥ ?3.5 V and in a TSSOP package.
16
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相关代理商/技术参数 |
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|---|---|
| BQ2057CPN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Industrial Control IC |
| BQ2057CSN | 功能描述:电池管理 Li-Ion LDO Linear Charge Management IC RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| BQ2057CSN | 制造商:BENCHMARQ 功能描述:PROG BATTERY CHARGER 2057 SOIC8 制造商:Texas Instruments 功能描述:Battery Management IC |
| BQ2057CSN1 | 制造商:Texas Instruments 功能描述:PROG BATTERY CHARGER 2057 SOIC8 制造商:Texas Instruments 功能描述:PROG BATTERY CHARGER, 2057, SOIC8 制造商:Texas Instruments 功能描述:PROG BATTERY CHARGER, 2057, SOIC8; Battery Type:Li-Ion, Li-Polymer; Input Voltage:15V; Battery Charge Voltage:4.2V; Charge Current Max:2A; Battery IC Case Style:SOIC; No. of Pins:8; No. of Series Cells:1; Operating Temperature |
| BQ2057CSNG4 | 功能描述:电池管理 Li-Ion LDO Linear Charge Management IC RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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