参数资料
| 型号： | BQ4014MB-85 |
| 厂商： | Texas Instruments |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 2MBIT 85NS 32DIP |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 2M (256K x 8) |
| 速度： | 85ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-DIP 模块（0.61"，15.49mm） |
| 供应商设备封装： | 32-DIP 模块（18.42x52.96） |
| 包装： | 托盘 |
| 产品目录页面： | 1017 (CN2011-ZH PDF) |
| 其它名称： | 296-9397-5 |
bq4014/bq4014Y
256Kx8 Nonvolatile SRAM
Features
? Data retention in the absence of
power
? Automatic write-protection
during power-up/power-down
cycles
? Industry-standard 32-pin 256K x
8 pinout
? Conventional SRAM operation;
unlimited write cycles
? 10-year minimum data retention
in absence of power
? Battery internally isolated until
power is applied
Pin Connections
Selection Guide
General Description
The CMOS bq4014 is a nonvolatile
2,097,152-bit static RAM organized as
262,144 words by 8 bits. The integral
control circuitry and lithium energy
source provide reliable nonvolatility
coupled with the unlimited write
cycles of standard SRAM.
The control circuitry constantly
monitors the single 5V supply for an
out-of-tolerance condition. When
V CC falls out of tolerance, the SRAM
is unconditionally write-protected to
prevent inadvertent write operation.
At this time the integral energy
Pin Names
A 0 –A 17
Address inputs
DQ 0 –DQ 7
Data input/output
CE
Chip enable input
OE
Output enable input
WE
Write enable input
NC
No connect
+5 volt supply input
V CC
Ground
V SS
source is switched on to sustain the
memory until after V CC returns
valid.
The bq4014 uses extremely low
standby current CMOS SRAMs,
coupled with small lithium coin
cells to provide nonvolatility without
long write-cycle times and the write-
cycle limitations associated with
EEPROM.
The bq4014 requires no external cir-
cuitry and is compatible with the
industry-standard 2Mb SRAM
pinout.
Block Diagram
Maximum
Negative
Maximum
Negative
Part
Number
bq4014 -85
bq4014 -120
Access
Time (ns)
85
120
Supply
Tolerance
-5%
-5%
Part
Number
bq4014Y -85
bq4014Y -120
Access
Time (ns)
85
120
Supply
Tolerance
-10%
-10%
Sept. 1992
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BQ4014Y | 制造商:TI 制造商全称:Texas Instruments 功能描述:256Kx8 Nonvolatile SRAM |
| BQ4014YMB-120 | 功能描述:NVRAM 256Kx8 Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| BQ4014YMB-85 | 功能描述:NVRAM 256Kx8 Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| BQ4015 | 制造商:TI 制造商全称:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
| BQ4015_07 | 制造商:TI 制造商全称:Texas Instruments 功能描述:512Kx8 Nonvolatile SRAM |
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