参数资料
型号: BR24L02FVM-WTR
厂商: Rohm Semiconductor
文件页数: 30/41页
文件大小: 0K
描述: IC EEPROM 2KBIT 400KHZ 8MSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-VSSOP,8-MSOP(0.110",2.80mm 宽)
供应商设备封装: 8-MSOP
包装: 标准包装
产品目录页面: 1379 (CN2011-ZH PDF)
其它名称: BR24L02FVM-WDKR
BR24L □□ -W Series,BR24S □□□ -W Series
○ Internal address increment
Page write mode (in the case of BR24S16-W)
Technical Note
WA7 -----
0 -----
0 -----
0 -----
WA4
0
0
0
WA3
0
0
0
WA2 WA1
0 0
0 0
0 1
WA0
0
1
0
0Eh
0
0
0
-----
-----
-----
0
0
0
1
1
0
1
1
0
1
1
0
0
1
0
Significant bit is fixed.
No digit up
For example, when it is started from address 0Eh, therefore, increment is made as below,
0Eh → 0Fh → 00h → 01h ??? , which please note.
* 0Eh ??? 16 in hexadecimal, therefore, 00001110 becomes a binary number.
○ Write protect (WP) terminal
? Write protect (WP) function
When WP terminal is set Vcc (H level), data rewrite of all address is prohibited. When it is set GND (L level), data rewrite of
all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do not use it open.
At extremely low voltage at power ON/OFF, by setting the WP terminal 'H', mistake write can be prevented.
During tWR, set the WP terminal always to 'L'. If it is set 'H', write is forcibly terminated.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
30/40
2009.09 - Rev.D
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