参数资料
| 型号： | BR24L04F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 19/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 400KHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (512 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1379 (CN2011-ZH PDF) |
| 其它名称： | BR24L04F-WE2DKR |
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BR24L □□ -W Series,BR24S □□□ -W Series
Technical Note
3. Set SDA and SCL so as not to become 'Hi-Z'.
When the above conditions 1 and 2 cannot be observed, take the following countermeasures.
a) In the case when the above condition 1 cannot be observed. When SDA becomes 'L' at power on .
→ Control SCL and SDA as shown below, to make SCL and SDA, 'H' and 'H'.
V CC
SCL
SDA
After Vcc becomes stable
t LOW
After Vcc becomes stable
t DH
t SU:DAT
t SU:DAT
Fig.61 When SCL= 'H' and SDA= 'L'
Fig.62 When SCL='L' and SDA='L'
b) In the case when the above condition 2 cannot be observed.
→ After power source becomes stable, execute software reset(P11).
c) In the case when the above conditions 1 and 2 cannot be observed.
→ Carry out a), and then carry out b).
● Low voltage malfunction prevention function
LVCC circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ. =1.2V) or below, it
prevent data rewrite.
● Vcc noise countermeasures
○ Bypass capacitor
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a by pass capacitor (0.1 μ F) between IC Vcc and GND. At that moment, attach it as close to IC
as possible.
And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
● Notes for use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin
in consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded,
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that of
GND terminal.
(5) Terminal design
In consideration of permissible loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
19/40
2009.09 - Rev.D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24L04F-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24L04NUX-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24L04NUX-WTR | 功能描述:IC EEPROM 4KBIT 100KHZ VSON8 RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| BR24L04-W | 功能描述:IC EEPROM 4KBIT 400KHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR |
| BR24L08 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
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