参数资料
| 型号： | BR24T08F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 10/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 8K 400KHZ 8-SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 其它名称： | BR24T08F-WE2DKR |
BR24T □□□□ Series
○ Notes on page write cycle
List of numbers of page write
Technical Note
Number of Pages 8Byte
16Byte
32Byte
64Byte
128Byte
256Byte
Product number
BR24T01-W
BR24T02-W
BR24T04-W
BR24T08-W
BR24T16-W
BR24T32-W
BR24T64-W
BR24T128-W
BR24T256-W
BR24T512-W
BR24T1M-W
The above numbers are maximum bytes for respective types.
Any bytes below these can be written.
In the case BR24T256-W, 1 page=64bytes, but the page
write cycle time is 5ms at maximum for 64byte bulk write.
It does not stand 5ms at maximum × 64byte=320ms(Max.)
○ Internal address increment
Page write mode (in the case of BR24T16-W)
WA7
0
WA4
0
WA3
0
WA2
0
WA1
0
WA0
0
0
0
0
0
0
0
0
0
0
1
1
0
Increment
0Eh
0
0
0
0
0
0
1
1
0
1
1
0
1
1
0
0
1
0
For example, when it is started from address 0Eh,
therefore, increment is made as below,
0Eh → 0Fh → 00h → 01h ??? which please note.
※ 0Eh ??? 0E in hexadecimal, therefore,
Significant bit is fixed.
00001110 becomes a binary number.
No digit up
○ Write protect (WP) terminal
? Write protect (WP) function
When WP terminal is set Vcc (H level), data rewrite of all addresses is prohibited. When it is set GND (L level), data
rewrite of all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do
not use it open.
In the case of use it as an ROM, it is recommended to connect it to pull up or Vcc.
At extremely low voltage at power ON / OFF, by setting the WP terminal 'H', mistake write can be prevented.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
10/21
2011.03 - Rev.A
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