参数资料
型号: BR24T256F-WE2
厂商: Rohm Semiconductor
文件页数: 2/22页
文件大小: 0K
描述: IC EEPROM I2C 256K 400KHZ 8-SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.173",4.40mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: BR24T256F-WE2DKR
BR24T □□□□ Series
● Absolute maximum ratings (Ta=25 ℃ )
Technical Note
● Memory cell characteristics (Ta=25 ℃ , Vcc=1.7 ~
5.5V)
Parameter
Symbol
Ratings
Unit
Parameter
Limits
Min. Typ. Max
Unit
Impressed voltage
V CC
-0.3 ~ +6.5
450 (SOP8) *1
V
Number of data
rewrite times *1
1,000,000
Times
310 (TSSOP-B8J)
Permissible
dissipation
Pd
450 (SOP-J8) *2
300 (SSOP-B8) *3
330 (TSSOP-B8) *4
*5
mW
Data hold years *1
*1Not 100% TESTED
40
Years
310 (MSOP8) *6
300 (VSON008X2030) *7
800 (DIP-T8) *8
● Recommended operating conditions
-0.3 ~ Vcc+1.0
Storage
temperature range
Action
temperature range
Terminal voltage
Junction
temperature *10
Tstg
Topr
Tjmax
- 65 ~ +150
- 40 ~ +85
150
*9
V
Parameter
Power source
voltage
Input voltage
Symbol
Vcc
V IN
Ratings
1.7 ~ 5.5
0 ~ Vcc
Unit
V
*1,*2
*3,*7
*4
*5, *6
*8
*9
*10
When using at Ta=25 ℃ or higher 4.5mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.0mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.3mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.1mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 8.1mW to be reduced per 1 ℃ .
The Max value of Terminal Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of
Terminal Voltage is not under -1.0V. (BR24T16/32/64/128/256/512/1M-W)
the Min value of Terminal Voltage is not under -0.8V. (BR24T01/02/04/08-W)
Junction temperature at the storage condition.
● Electrical characteristics (Unless otherwise specified, Ta= - 40 ~ +85 ℃ , VCC=1.7 ~ 5.5V)
Parameter Symbol
Limits
Min. Typ. Max.
Unit
Conditions
-0.3
“H” input voltage 1
“L” input voltage 1
V IH1
V IL1
0.7Vcc
*2
Vcc+1.0
0.3Vcc
V
V
“L” output voltage 1
“L” output voltage 2
Input leak current
Output leak current
V OL1
V OL2
I LI
I LO
- 1
- 1
0.4
0.2
1
1
V
V
μA
μA
I OL =3.0mA, 2.5V ≦ Vcc ≦ 5.5V (SDA)
I OL =0.7mA, 1.7V ≦ Vcc < 2.5V (SDA)
V IN =0 ~ Vcc
V OUT =0 ~ Vcc (SDA)
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
2.0
Byte write, Page write
BR24T01/02/04/08/16/32/64-W
I CC1
2.5
mA
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
Byte write, Page write
BR24T128/256-W
Current consumption
at action
4.5
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
Byte write, Page write
BR24T512/1M-W
Vcc=5.5V,f SCL =400kHz
I CC2
0.5
2.0
mA
Random read, current read, sequential read
BR24T01/02/04/08/16/32/64/128/256-W
Vcc=5.5V,f SCL =400kHz
Random read, current read, sequential read
BR24T512/1M-W
Vcc=5.5V, SDA ? SCL=Vcc
2.0
A0,A1,A2=GND,WP=GND
Standby current
I SB
μA
BR24T01/02/04/08/16/32/64/128/256-W
Vcc=5.5V, SDA ? SCL=Vcc
3.0
A0, A1, A2=GND, WP=GND
BR24T512/1M-W
○ Radiation resistance design is not made.
*1 BR24T512/1M-W is a target value because it is developing.
*2 When the pulse width is 50ns or less, it is -1.0V. (BR24T16/32/64/128/256/512/1M-W)
When the pulse width is 50ns or less, it is -0.8V. (BR24T01/02/04/08-W)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
2/21
2011.03 - Rev.A
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