参数资料
| 型号： | BR25L320FJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 15/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 32KBIT 5MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 32K (4K x 8) |
| 速度： | 5MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP-J |
| 包装： | 标准包装 |
| 产品目录页面： | 1379 (CN2011-ZH PDF) |
| 其它名称： | BR25L320FJ-WE2DKR |
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Technical Note
Notes on power ON/OFF
At power ON/OFF, set CS "H" (= V CC ).
When CS is "L", this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause
malfunction, mistake write or so. To prevent these, at power ON, set CS "H". (When CS is in "H" status, all inputs are canceled.)
Vcc
Vcc
GND
Vcc
CS
GND
Good example
Bad example
Fig.63 CS timing at power ON/OFF
(Good example)
(Bad example)
CS terminal is pulled up to V CC .
At power OFF, take 10ms or higher before re supply. If power is turned on without observing this condition, the IC internal
circuit may not be reset, which please note.
CS terminal is "L" at power ON/OFF.
In this case, CS always becomes "L" (active status), and EEPROM may have malfunction, mistake write owing to noises
and the likes.
Even when CS input is High-Z, the status becomes like this case, which please note.
PORcircuit
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable status. The POR
circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the
following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noises and the likes.
t R
V CC
Recommended conditions of t R , t OFF , Vbot
t R
t OFF
Vbot
t OFF
Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or below
0
Fig.64
Noise countermeasures
Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a
by pass capacitor (0.1 μ F) between IC Vcc and GND. At that moment, attach it as close to IC as possible.
And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
SCK noise
When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement.
To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SCK input,
set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SCK 100ns or below. In the case when the rise
time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible.
WP noise
During execution of write status register command, if there exist noises on WP pin, mistake in recognition may occur and forcible cancellation
may result, which please note. To avoid this, a Schmitt trigger circuit is built in WP input. In the same manner, a Schmitt trigger circuit is
built in SI input and HOLD input too.
Cautions on use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case
of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics
and transition characteristics and fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed.
Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum
ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should
not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is lower than that of GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in
the case of short circuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be
destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
15/16
2010.07 - Rev. B
相关PDF资料 |
PDF描述 |
|---|---|
| RSM43DTBI-S189 | CONN EDGECARD 86POS R/A .156 SLD |
| RSM43DTMI-S189 | CONN EDGECARD 86POS R/A .156 SLD |
| RSM43DTAI-S189 | CONN EDGECARD 86POS R/A .156 SLD |
| RMM43DTBI-S189 | CONN EDGECARD 86POS R/A .156 SLD |
| RMM43DTMI-S189 | CONN EDGECARD 86POS R/A .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BR25L320F-W | 制造商:ROHM 制造商全称:Rohm 功能描述:SPI BUS 32Kbit (4,096 x 8bit) EEPROM |
| BR25L320F-WE2 | 功能描述:电可擦除可编程只读存储器 SPI 32K BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR25L320-W | 制造商:ROHM 制造商全称:Rohm 功能描述:SPI BUS Serial EEPROMs |
| BR25L640FJ-W | 制造商:ROHM 制造商全称:Rohm 功能描述:SPI BUS 64Kbit (8,192 x 8bit) EEPROM |
| BR25L640FJ-WE2 | 功能描述:电可擦除可编程只读存储器 SPI 8192X8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
发布紧急采购，3分钟左右您将得到回复。