参数资料
| 型号： | BR25S320F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/19页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SPI 32KB 20MHZ 8-SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 32K (4K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 其它名称： | BR25S320F-WE2DKR |
BR25S □□□ Series
Technical Note
● I/O peripheral circuits
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○ Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller
VOL, IOL with considering VIL characteristics of this IC.
1. Pull up resistance
R PU ≧
V OLM ≦
V CC － V OLM
I OLM
V ILE
???①
???②
Microcontroller
V OLM
“L” output
I OLM
R PU
EEPROM
V ILE
“L” input
Example) When Vcc=5V, V ILE =1.5V, V OLM =0.4V, I OLM =2mA,
from the equation ① ,
5 － 0.4
R PU ≧
2×10 -3
∴ R PU ≧
2.3[k Ω ]
Fig.45 Pull up resistance
With the value of Rpu to satisfy the above equation, V OLM
becomes 0.4V or lower, and with V ILE (=1.5V), the equation ② is
also satisfied.
? V ILE :EEPROM V IL specifications
? V OLM :Microcontroller V OL specifications
? I OLM :Microcontroller I OL specifications
And, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
2.Pull down resistance
R PD ≧
V OHM
I OHM
???③
Microcontroller
EEPROM
V OHM ≧
V IHE
???④
V OHM
V IHE
Example) When V CC =5V, V OHM =V CC -0.5V, I OHM ＝ 0.4mA,
“H” output
I OHM
R PD
“H” input
R PD ≧
V IHE =V CC ×0.7V, from the equation ③,
5 － 0.5
0.4×10 -3
Fig.46
Pull down resistance
∴ R PD ≧
11.3[k Ω ]
0.2Vcc is input, operation speed becomes slow.
( 1 In this case, guaranteed value of operating timing is guaranteed.)
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting Vcc/GND level
amplitude of signal, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /
*1
In order to realize more stable high speed operation, it is recommended to make the values of R PU , R PD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
*
SO load capacity condition
Load capacity of SO output pin affects upon delay characteristic of SO output (Data output delay time, time from HOLDB
to High-Z, Output rise time, Output fall time.). In order to make output delay characteristic into better, make SO load
capacity small.
EEPROM
SO
C L
Fig.47 SO load capacity
○ Other cautions
Make the each wire length from the microcontroller to EEPROM input pin same length, in order to prevent setup / hold
violation to EEPROM, owing to difference of wire length of each input.
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
12/18
2010.12 - Rev.B
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| BR25S320NUX-WTR | 功能描述:电可擦除可编程只读存储器 电可擦除可编程只读存储器 Serial-SPI 32Kb RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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| BR25S640FVJ-WE2 | 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-SPI 64K-BIT 8K X 8 1.8V/2.5V/3.3V/5V 8-PIN TSS - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC EEPROM 64KBIT 20MHZ 8SOP |
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