参数资料
| 型号： | BR93L66-W |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 12/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 2MHZ 8DIP |
| 标准包装： | 2,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-DIP |
| 包装： | 管件 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
● Timing chart
1) Read cycle (READ)
Technical Note
CS
*1
～ ～
～ ～
～ ～
～ ～
SK
1
2
4
～ ～
～ ～
n
n+1
～ ～
BR93L46-W/A46-WM : n=25, m=5
BR93L56-W/A56-WM
: n=27, m=7
BR93L66-W/A66-WM
DI
1
1
0
Am
～ ～
A1
A0
～ ～
*2
～ ～
BR93L76-W/A76-WM
BR93L86-W/A86-WM
: n=29, m=9
DO
～ ～
0
D15
D14
～ ～
D1
D0
D15 D14
～ ～
High-Z
*1 Start bit
When data “1” is input for the first time after the rise of CS, this is recognized as a start bit. And when “1” is input after plural “0” are input, it is recognized as a
start bit, and the following operation is started. This is common to all the commands to described hereafter.
Fig. 60 Read cycle
○ When the read command is recognized, input address data (16bit) is output to serial. And at that moment, at taking A0, in
sync with the rise of SK, “0” (dummy bit) is output. And, the following data is output in sync with the rise of SK.
This IC has an address auto increment function valid only at read command. This is the function where after the above read
execution, by continuously inputting SK clock, the above address data is read sequentially. And, during the auto increment,
keep CS at “H”.
2) Write cycle (WRITE)
CS
～ ～
～ ～
～ ～
～ ～
tCS
～ ～
～ ～
STATUS
SK
1
2
4
～ ～
～ ～
n
～ ～
BR93L46-W/A46-WM : n=25, m=5
BR93L56-W/A56-WM
: n=27, m=7
BR93L66-W/A66-WM
DI
1
0
1
Am
～ ～
A1
A0
D15
D14
～ ～
D1
D0
～ ～
tSV
BR93L76-W/A76-WM
BR93L86-W/A86-WM
: n=29, m=9
DO
～ ～
BUSY READY
High-Z
tE/W
Fig.61 Write cycle
In this command, input 16bit data (D15~D0) are written to designated addresses (Am~A0). The actual write starts by the fall
of CS of D0 taken SK clock.
When STATUS is not detected, (CS=”L” fixed) Max. 5 ms in conformity with tE/W, and when STATUS is detected (CS=”H”),
all commands are not accepted for areas where “L” (BUSY) is output from D0, therefore, do not input any command.
3) Write all cycyle (WRAL)
CS
～ ～
～ ～
～ ～
～ ～
tCS
～ ～
～ ～
STATUS
SK
1
2
5
n
～ ～
BR93L46-W/A46-WM : n=25
DI
1
0
0
0
1
～ ～
～ ～
～ ～
D15
D14
～ ～
～ ～
～ ～
D1
D0
～ ～
tSV
BR93L56-W/A56-WM
BR93L66-W/A66-WM
BR93L76-W/A76-WM
BR93L86-W/A86-WM
: n=27
: n=29
DO
High-Z
～ ～
BUSY READY
Fig.62 Write all cycle
tE/W
In this command, input 16bit data is written simultaneously to all adresses. Data is not written continuously per one word
but is written in bulk, the write time is only Max. 5ms in conformity with tE/W.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
12/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L76FJ-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 8Kbit(512 x 16bit) EEPROM |
| BR93L76FJ-WE2 | 功能描述:电可擦除可编程只读存储器 MICROWIRE 8K BIT 512X16 2.5V/3.3V/5V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L76F-LE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs High Reliability Series |
| BR93L76FVT-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs High Reliability Series |
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