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参数资料
| 型号： | BR93L76RFJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 19/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 2MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (512 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP-J |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L76RFJ-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
○ Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL
even under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence
upon basic operations.
(1) Address data A0 = “1” input, dummy bit “0” output timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
? Make the through current to EEPROM 10mA or below.
? See to it that the level VIH of EEPROM should satisfy the following.
Conditions
Microcontroller
DI/O PORT
DI
EEPROM
VOHM ≦ VIHE
VOHM ≦ IOHM × R + VOLE
At this moment, if VOLE=0V,
“H” output
VOHM
VOHM ≦ IOHM × R
IOHM
R
DO
∴
R ≧
VOHM
IOHM
???⑦
VOLE
“L” output
? VIHE
? VOLE
? VOHM
? IOHM
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
Fig.84
Circuit at DI, DO direct connection (Microcontroller DI/O “H” output, EEPROM “L” output)
(2) DO status READY output timing
(When the microcontroller DI/O is “L”, EEPROM DO output “H”, and “L” is input to DI)
? Set the EEPROM input level VIL so as to satisfy the following.
Conditions
Microcontroller
EEPROM
VOLM ≧ VILE
“L” output
DI/O PORT
VOLM
IOHM
R
DI
VOLM ≧ VOHE – IOLM × R
As this moment, VOHE=Vcc
VOLM ≧ Vcc – IOLM × R
DO
VOHE
“H” output
∴
Vcc – VOLM
IOLM
???⑧
? VILE
? VOHE
? VOLM
? IOLM
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=5V, IOLM=0.4mA,
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller VOL specifications
: Microcontroller IOL specifications
From the equation ⑦ ,
From the equation ⑧ ,
0.4 × 10
2.1 × 10
R ≧
R ≧
VOHM
IOHM
5
-3
R ≧
R ≧
V cc – VOL M
IOLM
5 – 0.4
-3
∴
R ≧
12.5 [k ? ]
???⑨
∴
R ≧
2.2 [k ? ]
???⑩
Therefore, from the equations ⑨ and ⑩ ,
∴
R ≧
12.5 [k ? ]
Fig.85 Circuit at DI, DO direct connection (Microcontroller DI/O “L” output, EEPROM “H” output)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
19/40
2011.09 - Rev.G
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| BR93L76RFVJ-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 8Kbit(512 x 16bit) EEPROM |
| BR93L76RFVJ-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 8K BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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| BR93L76RFVM-WTR | 功能描述:电可擦除可编程只读存储器 SRL 512X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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