参数资料
型号: BS616LV1622TIP55
厂商: BRILLIANCE SEMICONDUCTOR, INC.
英文描述: Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
中文描述: 非常低功率/电压CMOS SRAM的100万× 16或2M × 8位开关
文件页数: 5/8页
文件大小: 255K
代理商: BS616LV1622TIP55
Revision 2.1
Jan.
2004
5
R0201-BS616LV1611
BSI
BS616LV1611
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE1 transition low.
4. OE = VIL
.
5. The parameter is guaranteed but not 100% tested.
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
READ CYCLE2 (1,3,4)
t CLZ
t CHZ(5)
D
OUT
CE1
(5)
t ACS1
CE2
t ACS2
READ CYCLE3 (1,4)
t OH
t RC
t OE
D
OUT
LB,UB
CE1
OE
ADDRESS
t CLZ
(5)
t ACS1
t CHZ
(1,5)
t OHZ (5)
t OLZ
t AA
t BDO
t BA
t BE
CE2
t ACS2
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