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参数资料
| 型号： | BS62LV2006TIP55 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/电压CMOS SRAM的256K × 8位 |
| 文件页数： | 3/9页 |
| 文件大小： | 321K |
| 代理商： | BS62LV2006TIP55 |
R0201-BS62LV2006
Revision 1.1
Jan.
2004
3
BSI
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
1.5
--
V
ICCDR
(3)
Data Retention Current
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
--
0.1
1.0
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC
(2)
--
ns
1. Typical characteristics are at TA = 25oC.
2. Fmax = 1/t
RC .
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccsB1_MAX. is 3uA/ 10uA at Vcc=3V/ 5V and TA=70oC.
5. Icc_MAX. is 23mA(@3V)/ 55mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
CE1
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.5V
≥
CE1
Vcc - 0.2V
≥
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
CE2
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIL
Vcc
VDR ≧ 1.5V
CE2 ≦ 0.2V
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
Vcc=3.0V
VIL
Guaranteed Input Low
Voltage
(3)
Vcc=5.0V
-0.5
--
0.8
V
Vcc=3.0V
2.0
--
VIH
Guaranteed Input High
Voltage
(3)
Vcc=5.0V
2.2
--
Vcc+0.3
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
ILO
Output Leakage Current
Vcc = Max, CE1 = VIH or CE2=VIL
or OE = VIH, VI/O = 0V to Vcc
--
1
uA
Vcc=3.0V
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc=5.0V
--
0.4
V
Vcc=3.0V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc=5.0V
2.4
--
V
70ns
Vcc=3.0V
--
18
ICC (5)
Operating Power Supply
Current
Vcc=Max,CE1=VIL, CE2=VIH
IDQ = 0mA, F = Fmax
(2)
70ns
Vcc=5.0V
--
45
mA
Vcc=3.0V
--
0.5
ICCSB
Standby Current-TTL
Vcc = Max, CE1 = VIH or CE2=VIL
IDQ = 0mA
Vcc=5.0V
--
1.0
mA
Vcc=3.0V
--
0.3
5
ICCSB1
(4)
Standby Current-CMOS
Vcc = Max, CE1≧Vcc-0.2V or
CE2≦0.2V ;VIN≧ Vcc - 0.2V or
VIN≦0.2V
Vcc=5.0V
--
1.0
30
uA
BS62LV2006
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