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参数资料
| 型号： | BS62LV2006TIP70 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功率/电压CMOS SRAM的256K × 8位 |
| 文件页数： | 4/9页 |
| 文件大小： | 321K |
| 代理商： | BS62LV2006TIP70 |
R0201-BS62LV2006
Revision 1.1
Jan.
2004
4
AC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC)
READ CYCLE
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MAY CHANGE
FROM H TO L
DON T CARE:
ANY CHANGE
PERMITTED
DOES NOT
APPLY
MUST BE
STEADY
WILL BE
CHANGE
FROM H TO L
CHANGE :
STATE
UNKNOWN
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
MAY CHANGE
FROM L TO H
WILL BE
CHANGE
FROM L TO H
,
BSI
BS62LV2006
AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
Vcc / 0V
Input Rise and Fall Times
1V/ns
Input and Output
Timing Reference Level
0.5Vcc
Output Load
CL = 100pF+1TTL
CL = 30pF+1TTL
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
(Vcc = 3.0~5.5V)
(Vcc = 2.7~5.5V)
UNIT
t
AVAX
t
RC
Read Cycle Time
55
--
70
--
ns
t
AVQV
t
AA
Address Access Time
--
55
--
70
ns
t
E1LQV
t
ACS1
Chip Select Access Time
--
55
--
70
ns
t
E2HOV
t
ACS2
--
55
--
70
ns
t
GLQV
t
OE
Output Enable to Output Valid
--
30
--
35
ns
t
E1LQX
t
CLZ1
Chip Select to Output Low Z
10
--
10
--
ns
t
E2HOX
t
CLZ2
10
--
10
--
ns
t
GLQX
t
OLZ
Output Enable to Output in Low Z
5
----5
--
ns
t
E1HQZ
t
CHZ1
Chip Deselect to Output in High Z
--
30
--
35
ns
t
E2HQZ
t
CHZ2
--
30
--
35
ns
t
GHQZ
t
OHZ
Output Disable to Output in High Z
--
25
--
30
ns
t
AXOX
t
OH
Data Hold from Address Change
10
--
10
--
ns
MIN. TYP. MAX.
Chip Select Access Time
(CE2)
(CE1)
Chip Select to Output Low Z
(CE1)
(CE2)
Chip Deselect to Output in High Z
(CE1)
(CE2)
CYCLE TIME : 55ns
CYCLE TIME : 70ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS62LV2007 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2007HC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2007HI | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008 | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2008DC | 制造商:BSI 制造商全称:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
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