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参数资料
| 型号： | BS62UV2006STCP10 |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SOIC |
| 中文描述： | 超低功率/电压CMOS SRAM的256K × 8位 |
| 文件页数： | 5/9页 |
| 文件大小： | 320K |
| 代理商： | BS62UV2006STCP10 |
R0201-BS62UV2006
Revision 1.1
Jan.
2004
5
BSI
READ CYCLE3 (1,4)
READ CYCLE2 (1,3,4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = VIL and CE2= VIH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = VIL
.
5. The parameter is guaranteed but not 100% tested.
t CLZ
(5)
D
OUT
CE2
CE1
(5)
t ACS2
t ACS1
t OH
t RC
t OE
t CLZ2
t CHZ2
(2,5)
D
OUT
CE2
CE1
OE
ADDRESS
(5)
t CLZ1
(5)
t ACS1
t ACS2
t CHZ1
(1,5)
t OHZ (5)
t OLZ
t AA
t CHZ1, t CHZ2
BS62UV2006
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
相关PDF资料 |
PDF描述 |
|---|---|
| BS62UV2006STCP85 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STI | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STI-10 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62UV2006STI-85 | 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP |
| BS62UV2006STIG85 | Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit |
相关代理商/技术参数 |
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| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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