参数资料
型号: BSM100GD120DLC
元件分类: 开关
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件页数: 1/7页
文件大小: 525K
代理商: BSM100GD120DLC
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相关PDF资料
PDF描述
BSM100GD60DLC TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM100GD120DN2 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM100GP60 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BSM10GD120DN2 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
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相关代理商/技术参数
参数描述
BSM100GD120DN2 功能描述:IGBT 模块 1200V 100A FL BRIDGE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
BSM100GD120DN2V2 制造商:未知厂家 制造商全称:未知厂家 功能描述:IGBT Module
BSM100GD60DLC 功能描述:IGBT 模块 600V 100A 3-PHASE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
BSM-100G-LF 功能描述:板上安装压力/力传感器 0-100Psi Non-ported 6VDC supply RoHS:否 制造商:Honeywell 工作压力:0 bar to 4 bar 压力类型:Gage 准确性:+ / - 0.25 % 输出类型:Digital 安装风格:Through Hole 工作电源电压:5 V 封装 / 箱体:SIP 端口类型:Dual Radial Barbed, Same sides
BSM-100G-LP 功能描述:板上安装压力/力传感器 0-100Psi Ported 6VDC supply RoHS:否 制造商:Honeywell 工作压力:0 bar to 4 bar 压力类型:Gage 准确性:+ / - 0.25 % 输出类型:Digital 安装风格:Through Hole 工作电源电压:5 V 封装 / 箱体:SIP 端口类型:Dual Radial Barbed, Same sides