参数资料
型号: BSM200GT120DN2
元件分类: 开关
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件页数: 6/7页
文件大小: 525K
代理商: BSM200GT120DN2
APEM
www.apem.com
A-83
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Positions and connections
A
FUNCTION
12146
12147
12148
12149
12148CT
12145
12144
12144-1R
12144-2R
12156
12166
12164
TERMINAL
IDENTIFICATION
WIRING FOR 3-WAY SWITCHES
(FUNCTION 4)
LEVER POSITION AND CONNECTIONS
I
II
III (Flat)
ON
-
ON
(1-3)-4
(1-3)-2
(5-7)-8
(5-7)-6
MOM
OFF
MOM
ON
OFF
MOM
ON
OFF
ON
MOM
OFF
ON
1-2
1-3
4-5
4-6
-
ON
MOM
1-2
1-3
4-5
4-6
ON
MOM
ON
MOM
ON
MOM
1-2
1-3
4-5
4-6
ON
-
ON
(1-3)-4
(1-3)-2
(5-7)-8
(5-7)-6
(9-11)-12
(9-11)-10
ON
-
ON
1A - 3A
1A - 2A
1C - 3C
1C - 2C
1E - 3E
1E - 2E
1G - 3G
1G - 2G
ON
1A - 2A
1A - 3A
1C - 2C
1C - 3C
1E - 2E
1E - 3E
1G - 2G
1G - 3G
External jumper (added by customer)
12164
12144
12144-1R
12144-2R
Flat
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
CE
G
A
2
1
33
1
2
4
3-1
210
9-11
12
3
1
25
4
6
7-5
8
4
3-1
2
1
4
3
2
6
5
4
1
3
2
6
5
4
1
3
2
6
5
1A
2A
1C
1E
1G
3A
2C
3C
2E
3E
2G
3G
相关PDF资料
PDF描述
BUZ91A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BUZ76A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BUZ61A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BUZ44A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
BUZ380 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
相关代理商/技术参数
参数描述
BSM204A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 50V V(BR)DSS | 200A I(D)
BSM20GD60DLC 功能描述:IGBT 模块 600V 20A 3-PHASE RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
BSM20GD60DLCE3224 功能描述:IGBT 模块 N-CH 600V 32A RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
BSM20GD60DN2 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)
BSM20GD60DN2E3224 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)