参数资料
型号: BSO201SP
厂商: Infineon Technologies
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 20V 14.9A 8-SOIC
标准包装: 1
系列: OptiMOS™
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 14.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 8 毫欧 @ 14.9A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 128nC @ 4.5V
输入电容 (Ciss) @ Vds: 5962pF @ 15V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 剪切带 (CT)
其它名称: BSO201SPXTINCT
3
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
Dn
MR
TCLK/CLK
Qn + 1
LL
Z
L
HL
Z
H
XH
X
L
TRUTH TABLE
Z = Low to High Transition.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
IEE
PECL Power Supply Current
mA
10H
70
85
70
85
70
85
100H
65
80
70
85
75
95
ICCL
TTL Supply Current
100
120
100
120
100
120
mA
ICCH
TTL Supply Current
100
120
100
120
100
120
mA
IOS
Output Short Circuit Current
–100
—–225
–100
—–225
–100
—–225
mA
VCCT = VCCE = 5.0V
±5%
DC ELECTRICAL CHARACTERISTICS
10H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3830
4160
3870
4190
3930
4280
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3050
3520
3050
3520
3050
3555
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3730
3650
3750
3690
3810
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
100H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3835
4120
3835
4120
3835
4120
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3190
3525
3190
3525
3190
3525
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3740
3620
3740
3620
3740
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
相关PDF资料
PDF描述
AT628C LED 2 ELEMENT RED T-1 BI-PIN
3364A-1-204E TRIMMER 200K OHM 0.2W SMD
UB226KKG016F-3JB SWITCH PUSH DPDT 0.4VA 28V
CTZ3S-20C-W1-PF CAP TRIMMER 4.5-20PF 25V SMD
UB226SKG036B-3JB SWITCH PUSH DPDT 0.4VA 28V
相关代理商/技术参数
参数描述
BSO201SP H 功能描述:MOSFET P-KANAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSO201SPH 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 20V 12A 8SOIC
BSO201SPHXT 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 20V 12A 8SOIC
BSO201SPHXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 20V 14.9A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 20V 12A 8SOIC
BSO201SPNTMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 20V 14.9A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 20V 14.9A 8-SOIC