参数资料
型号: BSO612CV
厂商: Infineon Technologies
文件页数: 3/5页
文件大小: 0K
描述: MOSFET COMPL N+P 60V 2A 8-SOIC
产品变化通告: Product Discontinuation 22/Feb/2008
标准包装: 1
系列: SIPMOS®
FET 型: N 和 P 沟道
FET 特点: 标准
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 3A,2A
开态Rds(最大)@ Id, Vgs @ 25° C: 120 毫欧 @ 3A,10V
Id 时的 Vgs(th)(最大): 4V @ 20µA
闸电荷(Qg) @ Vgs: 15.5nC @ 10V
输入电容 (Ciss) @ Vds: 340pF @ 25V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: P-DSO-8
包装: 剪切带 (CT)
其它名称: BSO612CVINCT
3
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
Dn
MR
TCLK/CLK
Qn + 1
LL
Z
L
HL
Z
H
XH
X
L
TRUTH TABLE
Z = Low to High Transition.
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Condition
IEE
PECL Power Supply Current
mA
10H
70
85
70
85
70
85
100H
65
80
70
85
75
95
ICCL
TTL Supply Current
100
120
100
120
100
120
mA
ICCH
TTL Supply Current
100
120
100
120
100
120
mA
IOS
Output Short Circuit Current
–100
—–225
–100
—–225
–100
—–225
mA
VCCT = VCCE = 5.0V
±5%
DC ELECTRICAL CHARACTERISTICS
10H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3830
4160
3870
4190
3930
4280
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3050
3520
3050
3520
3050
3555
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3730
3650
3750
3690
3810
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
100H PECL DC ELECTRICAL CHARACTERISTICS(1)
VCCT = VCCE = 5.0V
±5%
TA= 0
°CTA= +25°CTA= + 85°C
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Condition
IIH
Input HIGH Current
225
145
145
A
IIL
Input LOW Current
0.5
0.5
0.5
A
VIH
Input HIGH Voltage
3835
4120
3835
4120
3835
4120
mV
VCCT = 5.0V
VIL
Input LOW Voltage
3190
3525
3190
3525
3190
3525
mV
VCCT = 5.0V
VBB
Output Bias Voltage
3620
3740
3620
3740
3620
3740
mV
VCCT = 5.0V
Note:
1. PECL VIL, VIH, VOL, VOH, VBB are given for VCCT = VCCE = 5.0V and will vary 1:1 with power supply.
相关PDF资料
PDF描述
B32653A1822J FILM CAP 8.2NF 5% 1600V MKP
FXO-PC728-250 OSC 250 MHZ 2.5V PECL SMD
1M1-DP1-R6/1-1M1GE SWITCH ROCKER DPDT 5A 125V
B32652A4684J FILM CAP 680NF 5% 400V
BSO215C MOSFET N+P 20V 3.7A 8-SOIC
相关代理商/技术参数
参数描述
BSO612CV G 功能描述:MOSFET Dual N/P Channel 60 V 3 A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSO612CVG 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CVGHUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 2A 8-SOIC
BSO612CVNT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin SO
BSO612CVT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3A/2A 8-Pin DSO T/R